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    Semiconductor laser device
    1.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US6118799A

    公开(公告)日：2000-09-12

    申请号：US817602

    申请日：1997-06-10

    申请人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    发明人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2238 ,  H01S5/204 ,  H01S5/222 ,  H01S5/3432

    摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.

    摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物 日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28， 由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。 在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和 其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。 因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

    Semiconductor laser apparatus
    2.
    发明授权
    Semiconductor laser apparatus 有权
    半导体激光装置

    公开(公告)号：US06546032B1

    公开(公告)日：2003-04-08

    申请号：US09644080

    申请日：2000-08-23

    申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

    摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

    摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

    Method of fabricating semiconductor laser using selective growth
    3.
    发明授权
    Method of fabricating semiconductor laser using selective growth 有权
    使用选择性增长制造半导体激光器的方法

    公开(公告)号：US06171878B2

    公开(公告)日：2001-01-09

    申请号：US09157246

    申请日：1998-09-18

    申请人： Tsuyoshi Fujimoto ,  Yumi Naito ,  Atsushi Okubo ,  Yoshikazu Yamada

    发明人： Tsuyoshi Fujimoto ,  Yumi Naito ,  Atsushi Okubo ,  Yoshikazu Yamada

    IPC分类号： H01S302

    CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/2077 ,  H01S5/2206 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2304/00

    摘要： In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth. In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.

    摘要翻译： 在其中在有源层的两个表面上分别形成一对导光层的自对准结构半导体激光器中，具有比有源层宽的带隙的导光层，一对包覆层是 形成为夹持有源层和导光层，包层具有比导光层的带隙宽的带隙，在有源层和导光层之间分别形成一对载流子阻挡层， 具有比有源层和导光层的带隙宽的带隙的载流子阻挡层和具有条状窗口的电流阻挡层嵌入到至少一个导光层中，电流阻挡层是 通过选择性生长形成。以这种方式，可以精确地形成电流阻挡层的窗口，并且可以提高制造产率，同时避免对其他层的不良影响。

    Semiconductor laser device
    4.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5764668A

    公开(公告)日：1998-06-09

    申请号：US363834

    申请日：1994-12-27

    申请人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

    发明人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

    IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3409

    摘要： To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6

    摘要翻译： 为了克服传统弱波导激光和SCH结构激光器中经受的波导模式控制中的器件设计困境，实现了更高的输出和更低的辐射束色散，并改善了有源层两侧的波导模式 提供用于降低有源层的波导功能的载流子阻挡层，并且在载流子阻挡层的两个外侧设置波导层，并且在波导层的两个外侧设置包层，活性层为层叠 的侧面阻挡层和夹在其间的量子阱层或侧面阻挡层以及夹在其间的量子阱层和阻挡层，量子阱层的组成为GayIn1-yAs（0.6

    Semiconductor laser element and laser device using the same element
    6.
    发明授权
    Semiconductor laser element and laser device using the same element 失效
    半导体激光元件和使用相同元件的激光器件

    公开(公告)号：US5467364A

    公开(公告)日：1995-11-14

    申请号：US287802

    申请日：1994-08-09

    申请人： Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yuji Yoshida ,  Yoshikazu Yamada ,  Shoji Ishizaka

    发明人： Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yuji Yoshida ,  Yoshikazu Yamada ,  Shoji Ishizaka

    IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/3421 ,  H01S5/3428 ,  H01S5/3432

    摘要： A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.

    摘要翻译： 本发明的半导体激光器具有由以下部分构成的元件的结构：载体块层，从在元件的表面沿垂直方向形成的截面中的双方形成的有源层的外侧形成，用于降低导光功能 活性层; 在所述载体块层和包层之间的外侧提供波导引导层，使得波导层夹在包层之间。 本发明克服了传统的弱引导激光和LOC结构激光器在设计用于控制引导模式的装置方面的困境。 本发明还解决了获得更高输出和辐射束的低色散并改善光束轮廓的问题。

    Fuel supply control system for engine
    9.
    发明授权
    Fuel supply control system for engine 失效

    公开(公告)号：US06973922B2

    公开(公告)日：2005-12-13

    申请号：US10890514

    申请日：2004-07-14

    申请人： Yoshikazu Yamada ,  Eiichi Utsugi ,  Shosaku Chiba ,  Tsutomu Sasaki ,  Katsuhiko Tsutsui

    发明人： Yoshikazu Yamada ,  Eiichi Utsugi ,  Shosaku Chiba ,  Tsutomu Sasaki ,  Katsuhiko Tsutsui

    IPC分类号： F02M17/04 ,  F02M25/08 ,  F02M37/20 ,  F02M37/00

    CPC分类号： F02M25/0836 ,  F02M17/04 ,  F02M37/20

    摘要： A composite control valve is constructed by a valve housing, first and second diaphragms mounted to the valve housing and disposed to be opposed to each other, a negative pressure working chamber defined between the first and second diaphragms to communicate with a negative pressure generating section in an engine, a first control valve adapted to be opened and closed by advancing and returning of the first diaphragm, and a second control valve adapted to be opened and closed by advancing and returning of the second diaphragm. The first control valve is incorporated into an air vent system for a fuel tank, and the second control valve is incorporated into a fuel passage system extending from the fuel tank to a fuel supply section in the engine. Thus, upon stoppage of the operation of the engine, not only the fuel passage system but also the air vent system leading to the upper space in the fuel tank are blocked simultaneously, thereby preventing release of an evaporated fuel generated in the fuel tank to the atmosphere.

    Memory device including backup memory for saving data in standby mode
    10.
    发明授权
    Memory device including backup memory for saving data in standby mode 有权
    内存设备包括用于在待机模式下保存数据的备份内存

    公开(公告)号：US06973004B2

    公开(公告)日：2005-12-06

    申请号：US10346103

    申请日：2003-01-17

    申请人： Jun Iwata ,  Shoji Taniguchi ,  Koichi Kuroiwa ,  Yoshikazu Yamada

    发明人： Jun Iwata ,  Shoji Taniguchi ,  Koichi Kuroiwa ,  Yoshikazu Yamada

    IPC分类号： G06F1/30 ,  G06F12/16 ,  H04B1/16 ,  H04M1/73 ,  G11C7/00

    CPC分类号： G06F1/3203 ,  G06F1/3287 ,  H04W52/028 ,  Y02D10/171 ,  Y02D70/24

    摘要： A semiconductor device that quickly saves data stored in an area to which power is supplied intermittently. Power is supplied intermittently to a first area. Power is supplied continuously to a second area. A memory is located in the second area. A save circuit saves data used in the first area in the memory before the supply of power being stopped. A restoration circuit restores data which has been saved in the memory to a predetermined circuit in the first area. A power supply control circuit supplies power to the memory if data has been saved in the memory. Otherwise the power supply control circuit stops the supply of power to the memory.

    摘要翻译： 一种半导体器件，其能够快速地保存间歇地供电的区域中存储的数据。 间歇地供电到第一区域。 电源连续供应到第二个区域。 内存位于第二区。 节电电路在电源供电停止之前，将存储器中第一个区域中使用的数据保存在存储器中。 恢复电路将保存在存储器中的数据恢复到第一区域中的预定电路。 如果数据已被保存在存储器中，则电源控制电路向存储器供电。 否则电源控制电路停止向存储器供电。