发明授权
US06174582B1 Thin film magnetic disk having reactive element doped refractory metal seed layer
失效
具有反应性元素掺杂难熔金属种子层的薄膜磁盘
- 专利标题: Thin film magnetic disk having reactive element doped refractory metal seed layer
- 专利标题(中): 具有反应性元素掺杂难熔金属种子层的薄膜磁盘
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申请号: US09020151申请日: 1998-02-06
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公开(公告)号: US06174582B1公开(公告)日: 2001-01-16
- 发明人: Xiaoping Bian , Shanlin Duan , Jinshan Li , Mohammad Mirzamaani
- 申请人: Xiaoping Bian , Shanlin Duan , Jinshan Li , Mohammad Mirzamaani
- 主分类号: G11B566
- IPC分类号: G11B566
摘要:
A method of fabricating a thin film magnetic disk including depositing a seed layer of a refractory metal such as tantalum, Cr, Nb, W, V, or Mo and a reactive element such as N or O; depositing a nonmagnetic underlayer onto the seed layer; and depositing a magnetic layer is disclosed. Also disclosed is a thin film magnetic disk having a substrate; a seed layer comprising tantalum and at least about 1 atomic-% of nitrogen or oxygen; an underlayer comprising Cr or an alloy of chromium deposited onto the seed layer, the underlayer preferably having a preferred orientation of [200]; and a magnetic layer deposited onto the underlayer, the magnetic layer preferably having a preferred orientation of [11{overscore (2)}0]. Also disclosed is a disk drive using the thin film magnetic disk of the invention.
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