摘要:
A method of fabricating a thin film magnetic disk including depositing a seed layer of a refractory metal such as tantalum, Cr, Nb, W, V, or Mo and a reactive element such as N or O; depositing a nonmagnetic underlayer onto the seed layer; and depositing a magnetic layer is disclosed. Also disclosed is a thin film magnetic disk having a substrate; a seed layer comprising tantalum and at least about 1 atomic-% of nitrogen or oxygen; an underlayer comprising Cr or an alloy of chromium deposited onto the seed layer, the underlayer preferably having a preferred orientation of [200]; and a magnetic layer deposited onto the underlayer, the magnetic layer preferably having a preferred orientation of [11{overscore (2)}0]. Also disclosed is a disk drive using the thin film magnetic disk of the invention.
摘要:
The thin film magnetic disk of the present invention includes a non-metallic substrate having a seed layer deposited on the substrate, an underlayer deposited upon the seed layer composed of a chromium alloy having a relatively high oxygen concentration portion of from 2,000 ppm to 20,000 ppm and preferably approximately 4,000 ppm to 12,000 ppm, followed by a relatively low oxygen concentration portion of from 0-2,000 ppm, and preferably from 500 ppm to 1,500 ppm and a magnetic layer that is deposited upon the underlayer. The underlayer total thickness is in the range of from approximately 250 Å to approximately 700 Å with a preferred thickness of approximately 450 Å, wherein approximately half of the underlayer thickness is the high oxygen concentration portion and half is the low oxygen concentration portion.
摘要:
A thin film disk and a disk drive using the thin film disk are described. The disk has an onset layer between the underlayer and the boron containing magnetic layer, for example. The onset layer of the invention is useful because the boron containing magnetic layer material resists being deposited with the C-axis in plane. The onset layer material is selected to promote an in-plane C-axis orientation. When a boron containing magnetic layer is deposited on the onset layer the resulting in-plane PO is improved. The preferred onset layer is of hexagonal closed pack structured material which may be magnetic or nonmagnetic. Materials which are usable for the onset layer include a wide range of pure elements and cobalt alloys such as CoCr, CoPtCr, CoPtCrTa and CoCrB. The onset layer is particularly useful in allowing a ferromagnetic cobalt (Co) alloy containing a relatively high chromium and boron content to be deposited on nonmetallic substrates with the C-axis in the plane of disk without the need for negative bias during the sputtering of the underlayer.
摘要:
A perpendicular magnetic recording medium including improvements to the recording layer (RL), exchange break layer (EBL), soft underlayer (SUL), overcoat (OC), adhesion layer (AL) and the combination of the layers. Advances in the RL include a cap layer. Improvements in the EBL include a multiple layer EBL.
摘要:
An antiferromagnetically coupled (AFC) magnetic recording medium with an AFC master layer comprising at least two magnetic layers with the top magnetic layer including copper is described. The slave layer is separated from the master layer structure by a nonmagnetic spacer layer selected to antiferromagnetically couple the layers. The master layer structure according to the invention includes a bottom and top layer of distinct ferromagnetic materials. Preferably, the top layer of the master layer is a cobalt alloy including from 1 to 5 at. % copper with an example being CoPt13Cr20B8Cu2. The AFC magnetic layer structure can be used with a variety of substrates including circumferentially textured glass and NiP/AlMg.
摘要翻译:描述了具有包括至少两个具有顶部磁性层包括铜的磁性层的AFC主层的反铁磁耦合(AFC)磁记录介质。 通过选择用于反铁磁耦合层的非磁性间隔层将从属层与主层结构分离。 根据本发明的主层结构包括不同铁磁材料的底层和顶层。 优选地,主层的顶层是包括1至5个的钴合金。 %铜,例如CoPt 13 C 20 20 B 2 Cu 2。 AFC磁性层结构可以与各种基材一起使用,包括圆周纹理玻璃和NiP / AlMg。
摘要:
A thin film disk for use in magnetic recording with an underlayer structure that includes a layer of CrMoZr, CrMoNb or CrMoMn is described. The preferred embodiment includes a circumferentially textured glass substrate, a pre-seed layer, a B2 seed layer, an underlayer structure and a magnetic layer stack with a plurality of layers. The preferred underlayer structure has a first underlayer of CrTi followed by a second underlayer of CrMoZr. The preferred B2 seed layer material is RuAl. The preferred pre-seed layer is CrTiAl. The preferred magnetic layer stack is CoCr/CoPtCrB/CoPtCrBCu. The preferred embodiment is useful for longitudinal magnetic recording. The in-plane crystallographic orientation, the Mrt orientation ratio and the media SNR are improved by the inclusion of the CrMoZr, CrMoNb or CrMoMn according to the invention.
摘要:
A thin film magnetic media structure with a bi-layer structure of amorphous chromium titanium (CrTi) followed by an amorphous layer of nickel phosphorus (NiP) is disclosed. After the NiP has been deposited it is exposed to oxygen to form an oxidized surface. Preferably the underlayer is deposited directly onto the oxidized NiP surface. The bi-layer structure of CrTi/NiP promotes excellent in-plane crystallographic orientation in the cobalt alloy magnetic layer(s) and allows: an ultra-thin chromium underlayer to be used which provides better control over grain size and distribution. When the CrTi/NiP bi-layer structure is combined with a circumferentially textured substrate, preferably glass, a high Mrt orientation ratio (OR) results.
摘要:
A thin film disk for use in magnetic recording with an underlayer structure that includes a layer of CrMoZr, CrMoNb or CrMoMn is described. The preferred embodiment includes a circumferentially textured glass substrate, a pre-seed layer, a B2 seed layer, an underlayer structure and a magnetic layer stack with a plurality of layers. The preferred underlayer structure has a first underlayer of CrTi followed by a second underlayer of CrMoZr. The preferred B2 seed layer material is RuAl. The preferred pre-seed layer is CrTiAl. The preferred magnetic layer stack is CoCr/CoPtCrB/CoPtCrBCu. The preferred embodiment is useful for longitudinal magnetic recording. The in-plane crystallographic orientation, the Mrt orientation ratio and the media SNR are improved by the inclusion of the CrMoZr, CrMoNb or CrMoMn according to the invention.
摘要:
An antiferromagnetically coupled (AFC) magnetic recording medium with an AFC master layer comprising at least two magnetic layers with the top magnetic layer including copper is described. The slave layer is separated from the master layer structure by a nonmagnetic spacer layer selected to antiferromagnetically couple the layers. The master layer structure according to the invention includes a bottom and top layer of distinct ferromagnetic materials. Preferably, the top layer of the master layer is a cobalt alloy including from 1 to 5 at. % copper with an example being CoPt13Cr20B8Cu2. The AFC magnetic layer structure can be used with a variety of substrates including circumferentially textured glass and NiP/AlMg.
摘要翻译:描述了具有包括至少两个具有顶部磁性层包括铜的磁性层的AFC主层的反铁磁耦合(AFC)磁记录介质。 通过选择用于反铁磁耦合层的非磁性间隔层将从属层与主层结构分离。 根据本发明的主层结构包括不同铁磁材料的底层和顶层。 优选地,主层的顶层是包括1至5个的钴合金。 %铜,例如CoPt 13 C 20 20 B 2 Cu 2。 AFC磁性层结构可以与各种基材一起使用,包括圆周纹理玻璃和NiP / AlMg。
摘要:
The applicants disclose a thin film magnetic media structure with a pre-seed layer of CrTi. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by an underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.