发明授权
- 专利标题： Method of reducing leakage current in dielectric
- 专利标题（中）： 降低电介质泄漏电流的方法
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申请号： US09010005申请日： 1998-01-21
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公开(公告)号： US06174765B1公开(公告)日： 2001-01-16
- 发明人: Wen-Yi Hsieh , Kuo-Tai Huang
- 申请人： Wen-Yi Hsieh , Kuo-Tai Huang
- 优先权： TW86117832 19971127
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A method of reducing the leakage current of a dielectric layer of a capacitor. A substrate having a dielectric layer formed thereon is disposed into a furnace. A first annealing step is performed for nucleation. A second annealing step is performed to control the number of the nuclei. A third annealing step is performed for grain growth.
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