A method for detaching an epitaxial layer from one substrate and transferring it to another substrate allows an epitaxially grown material layer to be easily detached from a first substrate that has good epitaxial growth properties and transferred to another substrate having better cleaving, electrical or other properties than the first substrate. A mask is applied to a portion of a surface of the first epitaxial layer and a second epitaxial layer is grown over the first epitaxial layer and the mask. A trench is formed in the second epitaxial layer to expose the mask and a second substrate is bonded to the second epitaxial layer. An etchant is introduced through the trench and etches away the mask, thus releasing the second epitaxial layer from the first substrate and the first epitaxial layer. Thus, the second epitaxial layer has been released from the first substrate and transferred to the second substrate without performing operations that would impair the optical properties of the epitaxial material.