发明授权
US06178136B1 Semiconductor memory device having Y-select gate voltage that varies according to memory cell access operation
有权
具有根据存储单元访问操作而变化的Y选择栅极电压的半导体存储器件
- 专利标题： Semiconductor memory device having Y-select gate voltage that varies according to memory cell access operation
- 专利标题（中）： 具有根据存储单元访问操作而变化的Y选择栅极电压的半导体存储器件
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申请号： US09405264申请日： 1999-09-23
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公开(公告)号： US06178136B1公开(公告)日： 2001-01-23
- 发明人: Heng-Chih Lin , Takumi Nasu , David B. Scott
- 申请人： Heng-Chih Lin , Takumi Nasu , David B. Scott
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
A dynamic random access memory (DRAM) includes a Y-select circuit (218) that connects a pair of bit lines (204a and 204b) to a pair of sense nodes (210a and 210b). The Y-select circuit (218) provides a first impedance in a read operation, and a second impedance that is lower than the first impedance, in a write operation. Changes in Y-select circuit (218) impedance are achieved by driving transistors (N210a and N210b) within the Y-select circuit (218) with a first voltage during a read operation, and a second voltage during a write operation.
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