发明授权
- 专利标题: Plasma processing apparatus and method
- 专利标题(中): 等离子体处理装置及方法
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申请号: US08979949申请日: 1997-11-26
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公开(公告)号: US06180019B2公开(公告)日: 2001-01-30
- 发明人: Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
- 申请人: Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
- 优先权: JP8-315885 19961127
- 主分类号: H05H102
- IPC分类号: H05H102
摘要:
A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
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