发明授权
US06180420B2 Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
失效
使用Bi羧酸盐制备铁电薄膜的低温CVD工艺
- 专利标题： Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
- 专利标题（中）： 使用Bi羧酸盐制备铁电薄膜的低温CVD工艺
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申请号： US09208543申请日： 1998-12-09
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公开(公告)号： US06180420B2公开(公告)日： 2001-01-30
- 发明人: Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
- 申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.