In one embodiment, the present invention relates to a method of making a sub-lithographic structure involving the steps of providing a nitrogen rich film over a portion of a substrate; depositing a photoresist over the nitrogen rich film and the substrate, wherein the photoresist and the nitrogen rich film interact and form a thin desensitized resist layer around an interface between the photoresist and the nitrogen rich film; exposing the photoresist to radiation; developing the photoresist exposing the thin desensitized resist layer; directionally etching a portion of the thin desensitized resist layer; and removing the nitrogen rich film leaving the sub-lithographic structure on the substrate.