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145 条记录 (耗时 0.02 秒)

    Use of silicon oxynitride ARC for metal layers
    2.
    发明授权
    Use of silicon oxynitride ARC for metal layers 有权
    氧氮化硅ARC用于金属层

    公开(公告)号：US06326231B1

    公开(公告)日：2001-12-04

    申请号：US09207562

    申请日：1998-12-08

    申请人： Ramkumar Subramanian ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Marina V. Plat ,  Christopher F. Lyons ,  Bharath Rangarajan ,  Michael K. Templeton

    发明人： Ramkumar Subramanian ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Marina V. Plat ,  Christopher F. Lyons ,  Bharath Rangarajan ,  Michael K. Templeton

    IPC分类号： H01L2100

    CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/3143 ,  H01L21/3145

    摘要： In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer over the metal layer having a thickness from about 100 Å to about 150 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating. In another embodiment, the present invention relates to a method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, involing forming a silicon oxynitride antireflection coating over the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer over the oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%.

    摘要翻译： 在一个实施方案中，本发明涉及在金属层上形成氮氧化硅抗反射涂层的方法，包括以下步骤：在半导体衬底的至少一部分上提供包括金属层的半导体衬底; 在所述金属层上沉积厚度为约至约的氧氮化硅层; 并在氮氧化硅层上形成厚度约为5-20埃的氧化物层，以提供氮氧化硅抗反射涂层。 在另一个实施方案中，本发明涉及一种在半导体结构中减少具有第一反射率的金属层的表观反射率的方法，包括在金属层上形成氮氧化硅抗反射涂层; 其中形成在所述金属层上的所述氧氮化硅抗反射涂层具有第二反射率，并且通过化学气相沉积在所述金属层上沉积氧氮化硅并在所述氧氮化物上形成氧化物层，并且所述第一反射率和所述第二反射率之间的差异 至少约60％。

    Conformal organic coatings for sidewall patterning of sublithographic structures
    3.
    发明授权
    Conformal organic coatings for sidewall patterning of sublithographic structures 失效
    用于亚光刻结构侧壁图案的保形有机涂层

    公开(公告)号：US06183938B2

    公开(公告)日：2001-02-06

    申请号：US09207551

    申请日：1998-12-08

    申请人： Christopher F. Lyons ,  Michael K. Templeton

    发明人： Christopher F. Lyons ,  Michael K. Templeton

    IPC分类号： G03F700

    CPC分类号： H01L21/3088 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0045 ,  H01L21/0338

    摘要： In one embodiment, the present invention relates to a method of making a sub-lithographic structure involving the steps of providing a nitrogen rich film over a portion of a substrate; depositing a photoresist over the nitrogen rich film and the substrate, wherein the photoresist and the nitrogen rich film interact and form a thin desensitized resist layer around an interface between the photoresist and the nitrogen rich film; exposing the photoresist to radiation; developing the photoresist exposing the thin desensitized resist layer; directionally etching a portion of the thin desensitized resist layer; and removing the nitrogen rich film leaving the sub-lithographic structure on the substrate.

    摘要翻译： 在一个实施方案中，本发明涉及一种制备亚光刻结构的方法，其涉及以下步骤：在衬底的一部分上提供富氮膜; 在富氮膜和衬底上沉积光致抗蚀剂，其中光致抗蚀剂和富氮膜相互作用并在光致抗蚀剂和富氮膜之间的界面周围形成薄的脱敏抗蚀剂层; 将光致抗蚀剂暴露于辐射; 显影曝光薄的脱敏抗蚀剂层的光致抗蚀剂; 定向蚀刻一部分薄的脱敏抗蚀剂层; 并除去留在基板上的亚光刻结构的富氮膜。

    Sidewall formation for sidewall patterning of sub 100 nm structures
    5.
    发明授权
    Sidewall formation for sidewall patterning of sub 100 nm structures 失效
    侧壁形成用于侧向图案化的亚100nm结构

    公开(公告)号：US06291137B1

    公开(公告)日：2001-09-18

    申请号：US09234380

    申请日：1999-01-20

    申请人： Christopher F. Lyons ,  Michael K. Templeton ,  Kathleen R. Early

    发明人： Christopher F. Lyons ,  Michael K. Templeton ,  Kathleen R. Early

    IPC分类号： G03C500

    CPC分类号： H01L21/76885 ,  H01L21/28132 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

    摘要： In one embodiment, the present invention relates to a method of forming a conductive structure having a width of about 100 nm or less, involving the steps of providing a substrate having a conductive film; patterning a sidewall template over a first portion of the conductive film wherein a second portion of the conductive film is exposed, the sidewall template having at least one sidewall over the conductive film; depositing a sidewall film over the conductive film and the sidewall template, the sidewall film having a vertical portion adjacent the sidewall of the sidewall template and a horizontal portion in areas not adjacent the sidewall of the sidewall template; removing the horizontal portion of the sidewall film exposing a third portion of the conductive film; removing the sidewall template exposing a fourth portion of the conductive film; and etching the third portion and the fourth portion of the conductive film thereby providing the conductive structure having a width of about 100 nm or less underlying the vertical portion of the sidewall film.

    摘要翻译： 在一个实施例中，本发明涉及一种形成宽度为约100nm或更小的导电结构的方法，包括提供具有导电膜的基板的步骤; 在所述导电膜的第一部分上图案化侧壁模板，其中所述导电膜的第二部分被暴露，所述侧壁模板在所述导电膜上具有至少一个侧壁; 在所述导电膜和所述侧壁模板上沉积侧壁膜，所述侧壁膜具有邻近所述侧壁模板的侧壁的垂直部分和在不邻近所述侧壁模板的侧壁的区域中的水平部分; 去除暴露导电膜的第三部分的侧壁膜的水平部分; 去除暴露导电膜的第四部分的侧壁模板; 并且蚀刻导电膜的第三部分和第四部分，从而提供具有约100nm或更小的宽度在该侧壁膜的垂直部分下方的导电结构。

    Sidewall formation for sidewall patterning of sub 100 nm structures
    7.
    发明授权
    Sidewall formation for sidewall patterning of sub 100 nm structures 失效
    侧壁形成用于侧向图案化的亚100nm结构

    公开(公告)号：US06423475B1

    公开(公告)日：2002-07-23

    申请号：US09266367

    申请日：1999-03-11

    申请人： Christopher F. Lyons ,  Michael K. Templeton ,  Kathleen R. Early

    发明人： Christopher F. Lyons ,  Michael K. Templeton ,  Kathleen R. Early

    IPC分类号： G03C500

    CPC分类号： H01L21/32139

    摘要： In one embodiment, the present invention relates to a method of forming a conductive structure having a width of about 100 nm or less, involving the steps of providing a substrate having a conductive film; patterning a photoresist over a first portion of the conductive film wherein a second portion of the conductive film is exposed, the photoresist having at least one sidewall over the conductive film; depositing a sidewall film over the conductive film and the photoresist, the sidewall film having a vertical portion adjacent the sidewall of the photoresist and a horizontal portion in areas not adjacent the sidewall of the photoresist; removing the horizontal portion of the sidewall film exposing a third portion of the conductive film; removing the photoresist exposing a fourth portion of the conductive film; and etching the third portion and the fourth portion of the conductive film thereby providing the conductive structure having a width of about 100 nm or less underlying the vertical portion of the sidewall film.

    摘要翻译： 在一个实施例中，本发明涉及一种形成宽度为约100nm或更小的导电结构的方法，包括提供具有导电膜的基板的步骤; 在所述导电膜的第一部分上图案化光致抗蚀剂，其中所述导电膜的第二部分被暴露，所述光致抗蚀剂在所述导电膜上具有至少一个侧壁; 在所述导电膜和所述光致抗蚀剂上沉积侧壁膜，所述侧壁膜具有邻近所述光致抗蚀剂的侧壁的垂直部分和在不邻近所述光致抗蚀剂的侧壁的区域中的水平部分; 去除暴露导电膜的第三部分的侧壁膜的水平部分; 去除暴露导电膜的第四部分的光致抗蚀剂; 并且蚀刻导电膜的第三部分和第四部分，从而提供具有约100nm或更小的宽度在该侧壁膜的垂直部分下方的导电结构。

    Method for creating thinner resist coating that also has fewer pinholes
    8.
    发明授权
    Method for creating thinner resist coating that also has fewer pinholes 有权
    创造也具有较少针孔的较薄抗蚀剂涂层的方法

    公开(公告)号：US06350559B1

    公开(公告)日：2002-02-26

    申请号：US09398642

    申请日：1999-09-17

    申请人： Michael K. Templeton ,  Kathleen R. Early ,  Christopher F. Lyons

    发明人： Michael K. Templeton ,  Kathleen R. Early ,  Christopher F. Lyons

    IPC分类号： G03F700

    CPC分类号： H01L21/312 ,  G03F7/168

    摘要： In one embodiment, the present invention relates to a method of forming a thin photoresist layer having a low defect density, involving the steps of depositing a photoresist layer having a thickness from greater than about 0.5 &mgr;m to about 2 &mgr;m on a semiconductor substrate; and removing at least a portion of the photoresist layer to provide the thin photoresist layer having the low defect density and a thickness from about 0.1 &mgr;m to about 0.5 &mgr;m. In another embodiment, the present invention relates to a method of reducing pinhole defects in a thin photoresist layer having a thickness below about 0.5 &mgr;m comprising a photoresist material, involving the steps of depositing a layer of the photoresist material having a thickness greater than about 0.5 &mgr;m; and etching at least a portion of the photoresist material to provide the thin photoresist layer having the thickness below about 0.5 &mgr;m, wherein the thickness of the thin photoresist layer is about 90% or less than the thickness of the layer of the photoresist material.

    摘要翻译： 在一个实施方案中，本发明涉及一种形成具有低缺陷密度的薄的光致抗蚀剂层的方法，包括以下步骤：在半导体衬底上沉积厚度大于约0.5μm至约2μm的光致抗蚀剂层; 以及去除所述光致抗蚀剂层的至少一部分以提供具有低缺陷密度和约0.1μm至约0.5μm的厚度的薄光致抗蚀剂层。 在另一个实施方案中，本发明涉及一种减少厚度低于约0.5μm的光致抗蚀剂薄层中的针孔缺陷的方法，该光致抗蚀剂层包括光致抗蚀剂材料，其包括以下步骤：沉积厚度大于约0.5μm的光致抗蚀剂材料层 妈妈 并蚀刻所述光致抗蚀剂材料的至少一部分以提供具有低于约0.5μm厚度的薄的光致抗蚀剂层，其中所述光致抗蚀剂层的厚度为所述光致抗蚀剂材料层的厚度的约90％或更小。

    Simplified sidewall formation for sidewall patterning of sub 100 nm structures
    9.
    发明授权
    Simplified sidewall formation for sidewall patterning of sub 100 nm structures 失效
    亚100 nm结构的侧壁图案的简化侧壁形成

    公开(公告)号：US06214737B1

    公开(公告)日：2001-04-10

    申请号：US09234379

    申请日：1999-01-20

    申请人： Christopher F. Lyons ,  Michael K. Templeton ,  Kathleen R. Early

    发明人： Christopher F. Lyons ,  Michael K. Templeton ,  Kathleen R. Early

    IPC分类号： H01L213065

    CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76838

    摘要： In one embodiment, the present invention relates to a method of forming a conductive structure having a width of about 100 nm or less, involving the steps of providing a substrate having a conductive film; patterning a mask over a first portion of the conductive film wherein a second portion of the conductive film is exposed; partially etching the second portion of the conductive film thereby forming a sidewall in the conductive film; removing the mask; depositing a sidewall film over the conductive film, the sidewall film having a vertical portion adjacent the sidewall of the conductive film and a horizontal portion in areas not adjacent the sidewall of the conductive film; removing the horizontal portion of the sidewall film exposing a third portion of the conductive film; and etching the third portion of the conductive film thereby providing the conductive structure having a width of about 100 nm or less underlying the vertical portion of the sidewall film.

    摘要翻译： 在一个实施例中，本发明涉及一种形成宽度为约100nm或更小的导电结构的方法，包括提供具有导电膜的基板的步骤; 在导电膜的第一部分上图案化掩模，其中导电膜的第二部分被暴露; 部分蚀刻导电膜的第二部分，从而在导电膜中形成侧壁; 去除面膜; 在所述导电膜上沉积侧壁膜，所述侧壁膜具有邻近所述导电膜的侧壁的垂直部分和在不邻近所述导电膜的侧壁的区域中的水平部分; 去除暴露导电膜的第三部分的侧壁膜的水平部分; 并且蚀刻导电膜的第三部分，从而提供具有在侧壁膜的垂直部分下方的约100nm或更小的宽度的导电结构。