发明授权
- 专利标题: MOS transistor formation
- 专利标题(中): MOS晶体管的形成
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申请号: US09375503申请日: 1999-08-17
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公开(公告)号: US06184114B2公开(公告)日: 2001-02-06
- 发明人: Todd Lukanc
- 申请人: Todd Lukanc
- 主分类号: H01L213205
- IPC分类号: H01L213205
摘要:
Semiconductor devices of different conductivity types with optimized gate electrodes are formed on a semiconductor substrate by replacing the initial gate electrode and, optionally, the underlying gate oxide layer. Embodiments include forming a first gate electrode on a gate oxide layer and replacing the gate electrode with a second gate electrode. Optionally, a second dielectric layer can be deposited in place of or in addition to the gate oxide layer prior to depositing the second gate electrode.