发明授权
- 专利标题： Method of manufacturing tandem type thin film photoelectric conversion device
- 专利标题（中）： 制造串联型薄膜光电转换装置的方法
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申请号： US09389514申请日： 1999-09-03
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公开(公告)号： US06190932B1公开(公告)日： 2001-02-20
- 发明人: Masashi Yoshimi , Yoshifumi Okamoto
- 申请人： Masashi Yoshimi , Yoshifumi Okamoto
- 优先权： JP11-050268 19990226
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A p type semiconductor layer, an i type amorphous photoelectric conversion layer and an n type semiconductor layer of an amorphous type photoelectric conversion unit are formed in separate deposition chambers, respectively. A p type semiconductor layer, an i type crystalline photoelectric conversion layer and an n type semiconductor layer of crystalline type photoelectric conversion unit are formed continuously in one deposition chamber. Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity.