发明授权
US06190937B1 Method of producing semiconductor member and method of producing solar cell
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制造半导体元件的方法和太阳能电池的制造方法
- 专利标题: Method of producing semiconductor member and method of producing solar cell
- 专利标题(中): 制造半导体元件的方法和太阳能电池的制造方法
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申请号: US08999132申请日: 1997-12-29
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公开(公告)号: US06190937B1公开(公告)日: 2001-02-20
- 发明人: Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
- 申请人: Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
- 优先权: JP8-350132 19961227; JP8-350133 19961227
- 主分类号: H01L2176
- IPC分类号: H01L2176
摘要:
To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.
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