A ferroelectric memory capable of writing data at a small operation voltage has an insulated-gate field effect transistor, a ferroelectric film, and a pair of capacitor electrodes formed on the ferroelectric film and facing each other, one of the pair of capacitor electrodes being electrically connected to the insulated gate. A ferroelectric memory device with a simple structure has an insulated-gate field effect transistor including a source, a drain, and an insulated gate, and a ferroelectric capacitor connected between the drain and the insulated gate.