发明授权
- 专利标题: Semiconductor memory
- 专利标题(中): 半导体存储器
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申请号: US09445964申请日: 1999-12-16
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公开(公告)号: US06191983B1公开(公告)日: 2001-02-20
- 发明人: Goro Kitsukawa , Toshitsugu Ueda , Manabu Ishimatsu , Michihiro Mishima
- 申请人: Goro Kitsukawa , Toshitsugu Ueda , Manabu Ishimatsu , Michihiro Mishima
- 优先权: JP9-162679 19970619
- 主分类号: G11C700
- IPC分类号: G11C700
摘要:
There is provided a semiconductor memory which allows a redundant memory cell to be disposed at the center while maintaining the continuity of layout units of direct peripheral circuits and allows the total yield of the memory cell and the direct peripheral circuits to be improved. The inventive semiconductor memory is a 64 M-bits or 256 M-bits DRAM using a hierarchical word line structure or a multi-division bit line structure and comprises a main row decoder region, a main word driver region, a column decoder region, a peripheral circuit/bonding pad region, a memory cell array, a sense amplifier region, a sub-word driver region, intersection regions and the like formed on one semiconductor chip.