Invention Grant
- Patent Title: Method for the fabrication of a doped silicon layer
- Patent Title (中): 掺杂硅层的制造方法
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Application No.: US09390496Application Date: 1999-09-03
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Publication No.: US06197666B1Publication Date: 2001-03-06
- Inventor: Herbert Schafer , Martin Franosch , Reinhard Stengl , Hans Reisinger , Matthias Ilg
- Applicant: Herbert Schafer , Martin Franosch , Reinhard Stengl , Hans Reisinger , Matthias Ilg
- Priority: DE19840238 19980903
- Main IPC: H01L2120
- IPC: H01L2120
Abstract:
A method for the fabrication of a doped silicon layer, includes carrying out deposition by using a process gas containing SiH4, Si2H6 and a doping gas. The doped silicon layer which is thus produced can be used both as a gate electrode of an MOS transistor and as a conductive connection. At a thickness between 50 and 200 nm it has a resistivity less than or equal to 0.5 m&OHgr;cm.
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