发明授权
US06201598B1 Charged-particle-beam microlithographic exposure apparatus and reticles for use with same
失效
带电粒子束微光刻曝光装置和与其一起使用的掩模版
- 专利标题: Charged-particle-beam microlithographic exposure apparatus and reticles for use with same
- 专利标题(中): 带电粒子束微光刻曝光装置和与其一起使用的掩模版
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申请号: US09298646申请日: 1999-04-23
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公开(公告)号: US06201598B1公开(公告)日: 2001-03-13
- 发明人: Osamu Arai
- 申请人: Osamu Arai
- 优先权: JP10-131395 19980423
- 主分类号: G03B2768
- IPC分类号: G03B2768
摘要:
Charged-particle-beam (CPB) microlithographic exposure apparatus and reticles for use therewith. The reticle defines a pattern corresponding to a die pattern to be imprinted on the wafer. The pattern on the reticle is divided into multiple subregions separated from each other by light-shielding boundary zones. Multiple reticle subregions are have so as to include a center portion and a peripheral portion. As such reticle subregions are projected onto the substrate, the peripheral portions of adjacent subregions as projected onto the wafer overlap each other.
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