发明授权
- 专利标题： Method of producing a thin-film platinum temperature-sensitive resistor for a thin-film microstructure sensor
- 专利标题（中）： 薄膜微结构传感器用薄膜铂温敏电阻的制造方法
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申请号： US09450742申请日： 1999-11-30
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公开(公告)号： US06203673B1公开(公告)日： 2001-03-20
- 发明人: Hiroyoshi Shoji , Takayuki Yamaguchi , Junichi Azumi , Yukito Sato , Morimasa Kaminishi
- 申请人： Hiroyoshi Shoji , Takayuki Yamaguchi , Junichi Azumi , Yukito Sato , Morimasa Kaminishi
- 优先权： JP9-018243 19970131
- 主分类号： C23C1400
- IPC分类号： C23C1400
摘要：
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 Å. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.
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