A process for creating and an apparatus employing reentrant (pointing or directed inward) shaped orifices in a semiconductor substrate. A layer of graded dielectric material is deposited on the semiconductor substrate. A masked photoimagable material is deposited upon the graded dielectric material and exposed to electromagnetic energy such that a patterned photoimagable material is created. The patterned photoimagable material is developed to unveil the graded dielectric material which is then anisotropically etched. The bore in the graded dielectric material is then isotropically etched to complete the creation of holes in the substrate.