发明授权
- 专利标题： Method employing silicon nitride spacers for making an integrated circuit device
- 专利标题（中）： 采用氮化硅间隔物制造集成电路器件的方法
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申请号： US09465549申请日： 1999-12-16
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公开(公告)号： US06207541B1公开(公告)日： 2001-03-27
- 发明人: Siddhartha Das , Chunlin Liang
- 申请人： Siddhartha Das , Chunlin Liang
- 主分类号： H01L213205
- IPC分类号： H01L213205
摘要：
A process for patterning a gate of a semiconductor device is provided. A gate material layer is formed upon an oxide layer of a substrate. A photoresist layer is formed upon the gate material layer. A portion of the photoresist layer is photo oxidized. The portion defines a gate pattern. The portion of the photoresist layer is converted into a hard mask. A portion of the gate material layer is patterned with the hard mask. The portion of the gate material layer defines a gate.
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