发明授权
US06207550B1 Method for fabricating bump electrodes with a leveling step for uniform heights
失效
用于制造具有均匀高度的平整步骤的凸块电极的方法
- 专利标题: Method for fabricating bump electrodes with a leveling step for uniform heights
- 专利标题(中): 用于制造具有均匀高度的平整步骤的凸块电极的方法
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申请号: US09107319申请日: 1998-06-30
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公开(公告)号: US06207550B1公开(公告)日: 2001-03-27
- 发明人: Nobuhiro Hase , Minehiro Itagaki , Yoshifumi Nakamura , Satoru Yuhaku , Hiroaki Takezawa , Yoshihiro Bessho
- 申请人: Nobuhiro Hase , Minehiro Itagaki , Yoshifumi Nakamura , Satoru Yuhaku , Hiroaki Takezawa , Yoshihiro Bessho
- 优先权: JP9-176844 19970702
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
Disclosed is a method for mounting a semiconductor element, the method requiring no strict flatness for a substrate and being reliable in a semiconductor device produced by mounting a semiconductor element on a circuit substrate. In the multilayer circuit substrate comprising bump electrodes formed of a conductive paste, a conductive adhesive is applied to the top of bump electrodes and then leveled to obtain the end portions on the bump electrodes with a high coplanarity in height. The semiconductor element is mounted on this substrate using a combination of a conductive resin and a sealing resin or an anisotropic conductive sheet. Every top of the bump electrodes after the conductive adhesive is applied has a high coplanarity. The semiconductor element can be mounted with high reliability, on the substrate having such a poor flatness of the electrode face that mounting by a conventional method can not be applied.
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