发明授权
US06207563B1 Low-leakage CoSi2-processing by high temperature thermal processing
有权
低泄漏CoSi2处理通过高温热处理
- 专利标题: Low-leakage CoSi2-processing by high temperature thermal processing
- 专利标题(中): 低泄漏CoSi2处理通过高温热处理
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申请号: US09245815申请日: 1999-02-05
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公开(公告)号: US06207563B1公开(公告)日: 2001-03-27
- 发明人: Karsten Wieczorek , Manfred Horstmann , Frederick N. Hause
- 申请人: Karsten Wieczorek , Manfred Horstmann , Frederick N. Hause
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
Methods of fabricating a silicide layer on a substrate or transistor structures thereon are provided. An exemplary method includes the steps of depositing a layer of metal on a substrate that has a pn junction. The metal layer and the substrate are heated to react the metal with the substrate and form the silicide layer. Any unreacted metal is removed. The substrate and the silicide layer are heated above the agglomeration threshold temperature of any filaments of the silicide layer penetrating the pn junction but below the agglomeration threshold temperature of the silicide layer. The method eliminates silicide filaments, particularly in cobalt silicide processing, that can otherwise penetrate the pn junction of a transistor source/drain region a lead to reverse-bias diode-leakage currents.
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