A method of fabricating a glue layer and a barrier layer. A Ti layer is formed with a collimator sputtering in the via opening or the contact opening of the substrate. Through the control of flow of N2 and Ar, a nitride mode TiNx layer is formed on the Ti layer by sputtering. The nitride mode TiNx layer and the Ti layer uncovered by the nitride mode TiNx layer are treated with N2 RF plasma. This strengthens the structure of the nitride mode TiNx layer and allows the reaction with the exposed Ti layer so that it is transformed into a TiNx layer.