公开(公告)号：US06440841B2

公开(公告)日：2002-08-27

申请号：US09289859

申请日：1999-04-12

申请人： Chein-Cheng Wang ,  Shih-Chanh Chang

发明人： Chein-Cheng Wang ,  Shih-Chanh Chang

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/76877 ,  Y10S438/913

摘要： The present invention is a method of fabricating interconnects. A semiconductor substrate having a dielectric layer is provided. The dielectric layer has a via opening therein, which exposes the semiconductor substrate. Next, the surfaces of the via opening is covered with a conformal titanium layer formed by a sputtering process. The surface of the conformal titanium layer is covered with an Al—Si—Cu alloy layer formed by a sputtering process at a temperature of about 0° C. to 200° C. Then, the surface of the Al—Si—Cu alloy layer is covered with an Al—Cu alloy layer formed by a sputtering process at a temperature of about 380° C. to 450° C., which Al—Cu alloy layer fills the via opening. The Al—Cu alloy layer, the Al—Si—Cu alloy layer and the wetting layer on the dielectric layer are patterned by photolithography and etching process.

摘要翻译： 本发明是一种制造互连的方法。 提供具有电介质层的半导体衬底。 介电层在其中具有通孔，露出半导体衬底。 接下来，通过开口的表面被通过溅射工艺形成的共形钛层覆盖。 共形钛层的表面被在约0℃至200℃的温度下通过溅射工艺形成的Al-Si-Cu合金层覆盖。然后，Al-Si-Cu合金层 在约380℃至450℃的温度下通过溅射工艺形成的Al-Cu合金层覆盖，Al-Cu合金层填充通孔。 通过光刻和蚀刻工艺对Al-Cu合金层，Al-Si-Cu合金层和电介质层上的润湿层进行图案化。

公开(公告)号：US06207567B1

公开(公告)日：2001-03-27

申请号：US09290059

申请日：1999-04-12

申请人： Chein-Cheng Wang ,  Shih-Chanh Chang

发明人： Chein-Cheng Wang ,  Shih-Chanh Chang

IPC分类号： H01L2144

CPC分类号： H01L21/76856 ,  H01L21/76843

摘要： A method of fabricating a glue layer and a barrier layer. A Ti layer is formed with a collimator sputtering in the via opening or the contact opening of the substrate. Through the control of flow of N2 and Ar, a nitride mode TiNx layer is formed on the Ti layer by sputtering. The nitride mode TiNx layer and the Ti layer uncovered by the nitride mode TiNx layer are treated with N2 RF plasma. This strengthens the structure of the nitride mode TiNx layer and allows the reaction with the exposed Ti layer so that it is transformed into a TiNx layer.

摘要翻译： 一种制造胶层和阻挡层的方法。 在基板的通路开口或接触开口中用准直器溅射形成Ti层。 通过控制N2和Ar的流动，通过溅射在Ti层上形成氮化物模式TiNx层。 用N 2射频等离子体处理由氮化物模式TiNx层未覆盖的氮化物模式TiNx层和Ti层。 这增强了氮化物模式TiNx层的结构，并允许与暴露的Ti层的反应，使其转变成TiNx层。

公开(公告)号：US06197684B1

公开(公告)日：2001-03-06

申请号：US09272899

申请日：1999-03-19

申请人： Chein-Cheng Wang

发明人： Chein-Cheng Wang

IPC分类号： H01L2144

CPC分类号： H01L21/76856 ,  H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/906 ,  H01L2924/00

摘要： A method for forming a metal/metal nitride layer. A dielectric layer is formed on a substrate comprising a conductive region. The dielectric layer comprises an opening exposing a portion of the conductive region. A conformal metal layer is formed on the dielectric layer by physical vapor deposition using a collimator to cover the exposed conductive region. A metal nitride layer is formed on the metal layer. A part of the metal layer may be exposed due to poor step coverage. An implanting process is performed on the metal nitride layer and on the exposed metal layer using a nitric gas.

摘要翻译： 一种形成金属/金属氮化物层的方法。 在包括导电区域的基板上形成电介质层。 电介质层包括露出导电区域的一部分的开口。 通过使用准直器的物理气相沉积在电介质层上形成保形金属层以覆盖暴露的导电区域。 在金属层上形成金属氮化物层。 金属层的一部分可能由于台阶覆盖差而暴露。 在金属氮化物层和暴露的金属层上使用硝酸进行注入工艺。