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US06211277B1 Encapsulating material and LOC structure semiconductor device using the same 失效
封装材料和LOC结构使用其半导体器件

Encapsulating material and LOC structure semiconductor device using the same
摘要:
An LOC structure semiconductor device having a good solder heat resistance without electrical characteristic failures due to damages to the passivation film and the diffusion layer thereunder attributing to the filler can be obtained by encapsulating an LOC structure semiconductor chip with an encapsulating material comprising an epoxy resin, a curing agent, a curing promoter, and an inorganic filler, the filler having a smaller particle size than the distance between a inner lead and a semiconductor chip and being in an amount of 80 to 95% by weight based on the total weight of the encapsulating material.
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