发明授权
- 专利标题： Resurf LDMOS device with deep drain region
- 专利标题（中）： 具有深漏区的LDMOS器件
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申请号： US09320953申请日： 1999-05-27
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公开(公告)号： US06211552B1公开(公告)日： 2001-04-03
- 发明人: Taylor R. Efland , Sameer Pendharkar , Dan M. Mosher , Peter Chia-cu Mei
- 申请人： Taylor R. Efland , Sameer Pendharkar , Dan M. Mosher , Peter Chia-cu Mei
- 主分类号： H01L2978
- IPC分类号： H01L2978
摘要：
A RESURF LDMOS transistor (32) has a drain region including a first region (24) and a deep drain buffer region (34) surrounding the first region. The first region is more heavily doped than the deep drain buffer region. The deep drain buffer region improves the robustness of the transistor.
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