发明授权
- 专利标题: Compliant lead structures for microelectronic devices
- 专利标题(中): 符合微电子器件的引线结构
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申请号: US09281460申请日: 1999-03-30
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公开(公告)号: US06215191B1公开(公告)日: 2001-04-10
- 发明人: Masud Beroz , Konstantine Karavakis , Thomas H. DiStefano
- 申请人: Masud Beroz , Konstantine Karavakis , Thomas H. DiStefano
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
A method of treating a lead in a chip package. A conductive lead is positioned such that it extends across a gap in a dielectric substrate and is secured at either end to a first surface of the substrate. Directed energy is then applied to a desired portion of the surface of the lead within the gap. As a result of the application of energy, a surface layer of the lead is recrystallized thereby creating a fine grain, dense surface layer of lead material. Surface contaminates may be vaporized and contaminants at the grain boundaries of the recrystallized surface layers may be driven away from the grain boundaries such that a treated lead is more ductile and has better resistance to thermal cycling after the lead has been attached to a chip contact.
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