发明授权
- 专利标题: Sputtering apparatus
- 专利标题(中): 溅射装置
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申请号: US08672660申请日: 1996-06-28
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公开(公告)号: US06217714B1公开(公告)日: 2001-04-17
- 发明人: Munekazu Nishihara , Teiichi Kimura , Isamu Aokura
- 申请人: Munekazu Nishihara , Teiichi Kimura , Isamu Aokura
- 优先权: JP7-163166 19950629
- 主分类号: C23C1434
- IPC分类号: C23C1434
摘要:
In a sputtering apparatus, in a vacuum chamber having a gas supply and a gas discharge functions, a substrate is set to a supporting part therefor and a target is disposed at an electrode connected with a power source within a plane opposite to the substrate, so as to form a film while holding the substrate in a fixed state to the target. The electrode is divided into three or more electrode parts, the target is divided and disposed on the three or more electrode parts within the plane, and a magnet is arranged for each divided target at a position where a line of magnetic force on a surface of the each target is generated by each magnet.
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