发明授权
- 专利标题： Impurity introduction method and apparatus thereof and method of manufacturing semiconductor device
- 专利标题（中）： 杂质引入方法及装置以及半导体装置的制造方法
-
申请号： US08734218申请日： 1996-10-21
-
公开(公告)号： US06217951B1公开(公告)日： 2001-04-17
- 发明人: Bunji Mizuno , Hiroaki Nakaoka , Michihiko Takase , Ichiro Nakayama
- 申请人： Bunji Mizuno , Hiroaki Nakaoka , Michihiko Takase , Ichiro Nakayama
- 优先权： JP7-274234 19951023
- 主分类号： C23C1400
- IPC分类号： C23C1400
摘要：
An impurity solid including boron as impurity and a solid sample to which boron is introduced are held in a vacuum chamber. Ar gas is introduced into the vacuum chamber to generate plasma composed of the Ar gas. A voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the impurity solid and the impurity solid is sputtered by ions in the plasma, thereby mixing boron included in the impurity solid into the plasma composed of Ar gas. A voltage allowing the solid sample to serve as a cathode for the plasma is applied to the solid sample, and boron mixed into the plasma is introduced to the surface portion of the solid sample.
信息查询
