公开(公告)号：US06217951B1

公开(公告)日：2001-04-17

申请号：US08734218

申请日：1996-10-21

申请人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

发明人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

IPC分类号： C23C1400

CPC分类号： H01L29/66106 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32412 ,  H01J37/32678 ,  H01L21/2236

摘要： An impurity solid including boron as impurity and a solid sample to which boron is introduced are held in a vacuum chamber. Ar gas is introduced into the vacuum chamber to generate plasma composed of the Ar gas. A voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the impurity solid and the impurity solid is sputtered by ions in the plasma, thereby mixing boron included in the impurity solid into the plasma composed of Ar gas. A voltage allowing the solid sample to serve as a cathode for the plasma is applied to the solid sample, and boron mixed into the plasma is introduced to the surface portion of the solid sample.

摘要翻译： 将包含硼作为杂质的杂质固体和引入硼的固体样品保持在真空室中。 将Ar气引入真空室中以产生由Ar气组成的等离子体。 将杂质固体用作等离子体的阴极的电压施加到杂质固体，杂质固体由等离子体中的离子溅射，从而将包含在杂质固体中的硼混合到由Ar气体构成的等离子体中。 将固体样品用作等离子体的阴极的电压施加到固体样品，并且混入等离子体中的硼被引入固体样品的表面部分。

公开(公告)号：US5851906A

公开(公告)日：1998-12-22

申请号：US698154

申请日：1996-08-07

申请人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

发明人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

IPC分类号： H01L21/223 ,  H01L21/329 ,  H01L21/8238 ,  H01L21/263

CPC分类号： H01L29/6609 ,  H01L21/2236 ,  H01L21/823814

摘要： In order to dope impurities selectively at low temperature where the resist can be used, the invention presents an impurity doping method capable of performing not only cleaning process but also doping process at low temperature where the resist can be used. First, the active sample surface of a solid sample is exposed by irradiation with plasma, and without active irradiation with plasma, the gas or vapor containing object impurities is contacted with the active sample surface of the solid sample to dope the impurities. As a result, the impurity doping process at the time of formation of C-MOS structure or the like can be executed at low temperature so as not to spoil the function of the resist.

摘要翻译： 为了在可以使用抗蚀剂的低温下选择性掺杂杂质，本发明提出了一种不仅可以进行清洗工艺的掺杂方法，而且可以在可以使用抗蚀剂的低温下进行掺杂工艺。 首先，固体样品的活性样品表面通过等离子体照射而暴露，并且在没有主动照射等离子体的情况下，将含有气体或蒸汽的物体杂质与固体样品的活性样品表面接触以掺杂杂质。 结果，在形成C-MOS结构等时的杂质掺杂工艺可以在低温下进行，以免损坏抗蚀剂的功能。

公开(公告)号：US06784080B2

公开(公告)日：2004-08-31

申请号：US09840306

申请日：2001-04-24

申请人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

发明人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

IPC分类号： H01L2104

CPC分类号： H01L29/66106 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32412 ,  H01J37/32678 ,  H01L21/2236

摘要： A semiconductor substrate and an impurity solid that comprises of impurity to be introduced to a diode formation region are held in a vacuum chamber. Inert or reactive gas is introduced into the vacuum chamber to generate plasma composed of the inert or reactive gas. A first voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the said impurity solid and the said impurity solid is sputtered by ions in the plasma, thereby mixing the impurity within the said impurity solid into the plasma. A second voltage allowing a semiconductor substrate to serve as a cathode for the plasma is applied to the said semiconductor substrate, thereby directly introducing the impurity within the plasma to the surface portion of the diode formation region of the said semiconductor substrate, generating a impurity layer.

摘要翻译： 将包含待引入到二极管形成区域的杂质的半导体衬底和杂质固体保持在真空室中。 将惰性或反应性气体引入真空室以产生由惰性或反应性气体组成的等离子体。 将杂质固体用作等离子体的阴极的第一电压施加到所述杂质固体上，并且所述杂质固体被等离子体中的离子溅射，从而将所述杂质固体内的杂质混合到等离子体中。 将半导体衬底用作等离子体的阴极的第二电压被施加到所述半导体衬底，从而将等离子体内的杂质直接引入到所述半导体衬底的二极管形成区域的表面部分，产生杂质层 。

公开(公告)号：US5898207A

公开(公告)日：1999-04-27

申请号：US799211

申请日：1997-02-13

申请人： Michihiko Takase ,  Koji Eriguchi ,  Bunji Mizuno ,  Masatoshi Arai

发明人： Michihiko Takase ,  Koji Eriguchi ,  Bunji Mizuno ,  Masatoshi Arai

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/334 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L21/28211 ,  H01L28/40 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/66181 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/6659

摘要： A semiconductor device with a damage-free insulating layer is fabricated. A method includes the steps of: forming a first insulating layer on a semiconductor substrate, forming a conductive layer on the first insulating layer, patterning the conductive layer to form a gate electrode, forming low-concentration source/drain region by a first ion implantation, removing a portion of the insulating layer positioned under the side end of the gate electrode, forming a second insulating layer over the semiconductor substrate, the second insulating layer is etched to form a sidewall, forming a high-concentration source/drain region by a second ion implantation.

摘要翻译： 制造具有无损绝缘层的半导体器件。 一种方法包括以下步骤：在半导体衬底上形成第一绝缘层，在第一绝缘层上形成导电层，图案化导电层以形成栅电极，通过第一离子注入形成低浓度源/漏区 去除位于栅电极侧端的绝缘层的一部分，在半导体衬底的上方形成第二绝缘层，蚀刻第二绝缘层以形成侧壁，形成高浓度源极/漏极区域 第二离子注入。

公开(公告)号：US06037599A

公开(公告)日：2000-03-14

申请号：US5195

申请日：1998-01-09

申请人： Michihiko Takase ,  Bunji Mizuno

发明人： Michihiko Takase ,  Bunji Mizuno

IPC分类号： H01L21/687 ,  H01J37/00

CPC分类号： H01L21/68764 ,  H01L21/68771 ,  H01J2237/31701

摘要： An ion implantation apparatus has a wafer processing chamber which executes ion implantation on plural product wafers 2 while integrally revolving the product wafers 2 at a high speed in a locus passing through an irradiation range of ion beams 1. A wafer wheel 5 having plural wafer holders 4 which radially elongate from a rotating shaft 3 and which respectively hold the product wafers 2 is provided with an electrically conductive body 6 (7, 8) which is grounded and which passes through the irradiation range of the ion beams 1. Further, a method is provided in which ion implantation can be conduced without causing a charge-up, in a production step of a MOS semiconductor device of the extension structure. The source and drain regions of a MOS semiconductor of the extension structure are formed by using the ion implantation apparatus.

摘要翻译： 离子注入装置具有晶片处理室，其在多个产品晶片2上执行离子注入，同时在通过离子束1的照射范围的轨迹中高速地将产品晶片2整体旋转。具有多个晶片保持器 从旋转轴3径向延伸并且分别保持产品晶片2的导向体6（7,8）设置有接地并穿过离子束1的照射范围的导电体6（7,8）。此外， 提供了在延伸结构的MOS半导体器件的生产步骤中可以进行离子注入而不引起电荷的情况。 通过使用离子注入装置形成延伸结构的MOS半导体的源极和漏极区域。

公开(公告)号：US20120186519A1

公开(公告)日：2012-07-26

申请号：US13358277

申请日：2012-01-25

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： C23C16/50

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。 通过压力调节阀将真空容器内的压力保持在规定值。 将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US20090233383A1

公开(公告)日：2009-09-17

申请号：US11884924

申请日：2006-02-14

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： H01L21/66 ,  B05C11/00

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US07547619B2

公开(公告)日：2009-06-16

申请号：US10526999

申请日：2003-09-19

申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Ichiro Nakayama

发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Ichiro Nakayama

IPC分类号： H01L21/42 ,  H01L21/26

CPC分类号： H01L21/2236

摘要： A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film. Thus, the particle is attached or introduced to the surface, or the vicinity, of solid substance. The component devices are those manufactured taking advantage of the above method or apparatus.

摘要翻译： 引入杂质的方法和用于引入杂质的装置在较浅的轮廓中容易地形成杂质层。 还公开了利用这些方法或装置制造的部件装置。 当将材料引入具有在表面附着的氧化膜或其它膜的固体物质时，本方法和装置首先使用选自以下的至少一种方法除去氧化膜和其它膜：照射装置 具有等离子体的固体物质的表面，用气体照射固体表面的装置和将固体物质表面浸入还原液中的装置; 然后，附加或引入某个所需的粒子。 附着或引入颗粒的方法是使含颗粒的气体与表面接触，该表面已经被制成没有氧化膜和其它膜。 因此，将颗粒附着或引入固体物质的表面或附近。 部件装置是利用上述方法或装置制造的装置。

公开(公告)号：US20080142931A1

公开(公告)日：2008-06-19

申请号：US10599205

申请日：2005-03-17

申请人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： H01L29/00 ,  H01L21/42

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L21/26513

摘要： An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.

摘要翻译： 形成具有盒状杂质分布的杂质区域。 杂质引入方法包括将期望的杂质引入固体基体的表面的步骤，以及在杂质引入步骤之后将等离子体辐射到固体基体表面的步骤，从而形成具有大致盒形的杂质分布， 形状。

公开(公告)号：US20070212837A1

公开(公告)日：2007-09-13

申请号：US11596372

申请日：2005-05-12

申请人： Bunji Mizuno ,  Yuichiro Sasaki ,  Ichiro Nakayama ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Katsumi Okashita ,  Hisataka Kanada

发明人： Bunji Mizuno ,  Yuichiro Sasaki ,  Ichiro Nakayama ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Katsumi Okashita ,  Hisataka Kanada

IPC分类号： H01L21/77

CPC分类号： H01L21/26513 ,  H01L21/26566 ,  H01L21/28035 ,  H01L29/7833

摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

摘要翻译： 本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。 提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。