发明授权
US06218196B1 Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device
失效
蚀刻装置，蚀刻方法，半导体装置的制造方法以及半导体装置
- 专利标题： Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device
- 专利标题（中）： 蚀刻装置，蚀刻方法，半导体装置的制造方法以及半导体装置
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申请号： US09188117申请日： 1998-11-09
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公开(公告)号： US06218196B1公开(公告)日： 2001-04-17
- 发明人: Hirotoshi Ise , Takayuki Ikushima , Minoru Hanazaki , Nobuhiro Nishizaki
- 申请人： Hirotoshi Ise , Takayuki Ikushima , Minoru Hanazaki , Nobuhiro Nishizaki
- 优先权： JP10-123028 19980506
- 主分类号： H01L21461
- IPC分类号： H01L21461
摘要：
Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl2 and BCl3 are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF3 gas or a CF4 gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.
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