公开(公告)号：US06218196B1

公开(公告)日：2001-04-17

申请号：US09188117

申请日：1998-11-09

申请人： Hirotoshi Ise ,  Takayuki Ikushima ,  Minoru Hanazaki ,  Nobuhiro Nishizaki

发明人： Hirotoshi Ise ,  Takayuki Ikushima ,  Minoru Hanazaki ,  Nobuhiro Nishizaki

IPC分类号： H01L21461

CPC分类号： C23F4/00 ,  H01L21/32136

摘要： Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl2 and BCl3 are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF3 gas or a CF4 gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.

摘要翻译： 两个电极设置在处理容器中以彼此相对。 将Cl2和BCl3的主要蚀刻处理气体引入处理容器中，并且向其中加入由C，H和F中的至少两种构成的沉积型气体，例如CHF 3气体或CF 4气体。 通过在保持要蚀刻的样品的两个电极之间施加脉冲调制的高频电压来产生等离子体。 通过使用等离子体蚀刻样品。

公开(公告)号：US06287980B1

公开(公告)日：2001-09-11

申请号：US09415910

申请日：1999-10-12

申请人： Minoru Hanazaki ,  Takayuki Ikushima ,  Kenji Shirakawa ,  Shinji Yamaguchi ,  Masakazu Taki

发明人： Minoru Hanazaki ,  Takayuki Ikushima ,  Kenji Shirakawa ,  Shinji Yamaguchi ,  Masakazu Taki

IPC分类号： H01L2100

CPC分类号： H01L21/67069 ,  H01J37/3244

摘要： A plasma processing apparatus mainly comprises a processing chamber (10) formed by a vacuum vessel, a magnetic field forming coil (80) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (101) supplying various gases to the processing chamber (10). The processing chamber (10) is divided into a reaction chamber (44) forming plasma with a partition wall (43) and a buffer chamber (45) discharging externally supplied gases with pressure difference. The reaction chamber (44) includes a high-frequency electrode arranged oppositely to the buffer chamber (45). The gas supply means (101) includes pulse gas valves (63a and 63b) for pulsatively supplying gases to the processing chamber (10). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.

摘要翻译： 一种等离子体处理装置主要包括由真空容器形成的处理室（10），设置在处理室周围的用于形成旋转磁场的磁场形成线圈（80），以及将各种气体供应至处理的气体供给装置 室（10）。 处理室（10）被分为形成等离子体的反应室（44）和分隔壁（43）以及缓冲室（45），该压力室排出外部供应压力差的气体。 反应室（44）包括与缓冲室（45）相对布置的高频电极。 气体供给装置（101）包括用于向处理室（10）脉动地供给气体的脉冲气体阀（63a和63b）。 这样提供了一种等离子体处理方法和等离子体处理装置，其能够均匀地处理具有大直径的晶片并且相对于精细蚀刻图案减小RIE滞后。

公开(公告)号：US07790478B2

公开(公告)日：2010-09-07

申请号：US12180514

申请日：2008-07-25

申请人： Kazuyuki Fujii ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

发明人： Kazuyuki Fujii ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

IPC分类号： H01L21/66

CPC分类号： H01L21/67069 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32963

摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.

摘要翻译： 在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。 为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入 在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统 通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

公开(公告)号：US6054016A

公开(公告)日：2000-04-25

申请号：US31706

申请日：1998-02-27

申请人： Mutumi Tuda ,  Kouichi Ono ,  Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Toshio Komemura ,  Kouji Oku ,  Shinji Nakaguma

发明人： Mutumi Tuda ,  Kouichi Ono ,  Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Toshio Komemura ,  Kouji Oku ,  Shinji Nakaguma

IPC分类号： H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32688 ,  H05H1/46

摘要： There is provided a plasma generating apparatus comprising: a waveguide for guiding a microwave; a vacuum vessel connected to the waveguide, having a means for supplying a gas for discharging electrons and a means for evacuating; and a dielectric member in a tube-like shape or a rod-like shape which is inserted in the vacuum vessel, wherein the dielectric member is provided with a means for emitting the microwave, whereby it is possible to apply the electric power of microwave effectively to plasma of high density exceeding so-called cut-off density and to homogenize the distribution of plasma in the vacuum vessel.

摘要翻译： 提供了一种等离子体产生装置，包括：用于引导微波的波导; 连接到波导的真空容器，具有用于提供用于排出电子的气体的装置和用于排空的装置; 以及插入真空容器中的管状或棒状形状的电介质构件，其中，电介质构件设置有用于发射微波的装置，由此可以有效地施加微波的电力 到高密度的等离子体超过所谓的截止密度并使真空容器中的等离子体的分布均匀化。

公开(公告)号：US06416618B2

公开(公告)日：2002-07-09

申请号：US09354574

申请日：1999-07-16

申请人： Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Hideki Oura

发明人： Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Hideki Oura

IPC分类号： C23F102

CPC分类号： H01L21/67098 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/6831

摘要： There is described a wafer processing apparatus intended to efficiently secure a wafer on an electrostatic chuck. A heater is disposed in a processing chamber for heating a wafer, and a dielectric plate for supporting the wafer is also disposed in the processing chamber. First and second electrodes are embedded in the dielectric plate, and first and second variable D.C. power supplies are disposed so as to supply voltages to the first and second electrodes, respectively. After the wafer has been placed on an electrostatic chuck, the wafer is pre-heated before being subjected to attraction force. After completion of the pre-heating phase, the first and second D.C. power supplies supply voltages to the first and second electrodes, thus securing the wafer on the dielectric plate.

摘要翻译： 描述了用于有效地将晶片固定在静电卡盘上的晶片处理设备。 加热器设置在用于加热晶片的处理室中，并且用于支撑晶片的电介质板也设置在处理室中。 第一和第二电极被嵌入在电介质板中，并且第一和第二可变直流电源被设置成分别向第一和第二电极提供电压。 在将晶片放置在静电卡盘上之后，晶片在受到吸引力之前被预热。 在预热阶段完成之后，第一和第二直流电源向第一和第二电极提供电压，从而将晶片固定在电介质板上。

公开(公告)号：US6024105A

公开(公告)日：2000-02-15

申请号：US19702

申请日：1998-02-06

申请人： Minoru Hanazaki ,  Masaaki Tsuchihashi

发明人： Minoru Hanazaki ,  Masaaki Tsuchihashi

IPC分类号： H01L21/302 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B08B3/02

CPC分类号： H01J37/32862 ,  C23C16/4407 ,  H01J2237/022 ,  Y10S134/902 ,  Y10S438/905 ,  Y10S438/906

摘要： An introduction pipe for gas or the like for introducing water or water vapor is connected to a vacuum process chamber. The vacuum process chamber is evacuated through an evacuation exhaust port, and the introduced water vapor or water is solidified or liquefied by adiabatic expansion using a floating fine particle as a core. The particle on which the water vapor or the like is solidified or liquefied is discharged outside the vacuum process chamber. Thus, a semiconductor manufacturing device capable of reducing the number of fine particles on a wafer without decreasing uptime ratio is achieved.

摘要翻译： 用于引入水或水蒸气的气体等的导入管连接到真空处理室。 真空处理室通过排气口抽真空，引入的水蒸汽或水通过绝热膨胀固化或液化，以漂浮的微粒为核心。 水蒸汽等固化或液化的颗粒排出真空处理室外。 因此，可以实现能够减少晶片上的微粒数量而不减少正常运行时间比的半导体制造装置。

公开(公告)号：US20090035945A1

公开(公告)日：2009-02-05

申请号：US12180514

申请日：2008-07-25

申请人： Kazuyuki FUJII ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

发明人： Kazuyuki FUJII ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

IPC分类号： H01L21/30 ,  C25F5/00

CPC分类号： H01L21/67069 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32963

摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.

摘要翻译： 在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。 为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入 在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统 通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

公开(公告)号：US06273023B1

公开(公告)日：2001-08-14

申请号：US09228233

申请日：1999-01-11

申请人： Masaaki Tsuchihashi ,  Minoru Hanazaki

发明人： Masaaki Tsuchihashi ,  Minoru Hanazaki

IPC分类号： C23C1600

CPC分类号： H01J37/32706 ,  C23C16/4586

摘要： A plasma processing apparatus capable of attracting and holding a semiconductor wafer reliably once the processing of the semiconductor wafer is started includes: a vacuum chamber; an electrode arranged inside the vacuum chamber; a dielectric film formed on a surface of the electrode; a gas supply port leading to the vacuum chamber; a high-frequency electric power supply connected to the electrode; a memory operation unit which depends on a processing condition for producing a desired plasma, to calculate and output the voltage value corresponding to the sum of a value of a minimal actual attract and hold voltage required to be applied between one surface of the semiconductor wafer mounted on the dielectric film and a surface of the dielectric film to attract and hold one surface of the semiconductor wafer on the surface of the dielectric film and a value of a self-bias voltage generated at the other surface of the semiconductor wafer when the desired plasma is produced; and an electrostatic chuck power supply for applying the voltage corresponding to the voltage value calculated in the memory operation unit to the electrode. An electrostatic attract and hold vacuum chucking method employed in the plasma processing apparatus is also disclosed.

摘要翻译： 一旦开始半导体晶片的处理，能够可靠地吸引并保持半导体晶片的等离子体处理装置包括：真空室; 设置在真空室内的电极; 形成在电极表面上的电介质膜; 通向真空室的气体供给口; 连接到电极的高频电源; 存储器操作单元，其依赖于用于产生所需等离子体的处理条件，以计算和输出对应于在安装的半导体晶片的一个表面之间施加的最小实际吸引和保持电压的值之和的电压值 在电介质膜和电介质膜的表面上，以在电介质膜的表面上吸引并保持半导体晶片的一个表面，并且当期望的等离子体在半导体晶片的另一个表面产生的自偏压值 生产; 以及静电卡盘电源，用于将对应于在存储器操作单元中计算出的电压值的电压施加到电极。 还公开了在等离子体处理装置中采用的静电吸引和保持真空吸附方法。

公开(公告)号：US4894510A

公开(公告)日：1990-01-16

申请号：US092590

申请日：1987-09-03

申请人： Koichiro Nakanishi ,  Hiroki Ootera ,  Minoru Hanazaki ,  Toshihiko Minami

发明人： Koichiro Nakanishi ,  Hiroki Ootera ,  Minoru Hanazaki ,  Toshihiko Minami

IPC分类号： H01J37/32

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/32678

摘要： In a plasma processor having a plasma generation portion which generates a plasma through electron cyclotron resonance, and a plasma reaction portion which receives therein a substrate to be processed with the plasma; the improvement comprising the fact that the plasma generation portion includes a plasma generating glass tube which can supply a plasma generating gas, an r.f. waveguide which accommodates the plasma generating glass tube and which establishes a nonuniform r.f. electric field perpendicular to an axial direction of the plasma generating portion, and a coil assembly which is arranged around the r.f. waveguide and which establishes a nonuniform magnetostatic field in the axial direction, at least a part of the magnetic field of the coil assembly being subjected to a rotational motion or a rectilinear motion.

摘要翻译： 在具有通过电子回旋共振产生等离子体的等离子体产生部分的等离子体处理器和等离子体反应部分中接收等离子体处理的基板; 该改进包括等离子体产生部分包括能够提供等离子体产生气体的等离子体产生玻璃管，r.f. 波导，其容纳等离子体产生玻璃管并且建立不均匀的r.f. 垂直于等离子体产生部分的轴向的电场和围绕r.f.布置的线圈组件。 并且其在轴向上建立不均匀的静磁场，线圈组件的至少一部分磁场受到旋转运动或直线运动。

公开(公告)号：US06864982B2

公开(公告)日：2005-03-08

申请号：US10162882

申请日：2002-06-06

申请人： Minoru Hanazaki ,  Toshiki Oono

发明人： Minoru Hanazaki ,  Toshiki Oono

IPC分类号： G01N21/73 ,  G01N21/68 ,  G01N33/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  G01N21/00

CPC分类号： H01J37/32935 ,  G01N21/68 ,  G01N33/0011

摘要： A gas analyzer for a semiconductor treater improved to be capable of monitoring leakage or change of gas composition influencing treatability of the semiconductor treater in situ is provided. A duct is provided on the outer wall of a chamber of the semiconductor treater for taking out gas to be analyzed from the chamber. A gas analytic chamber stores the gas to be analyzed taken out through the duct. A discharge formation part is mounted in the vicinity of the gas analytic chamber. The discharge formation part includes a high frequency generation coil generating a high frequency and forming a plasma of the gas to be analyzed in the gas analytic chamber. This gas analyzer further comprises a spectrometer analyzing the emission wavelength of the plasma of the gas to be analyzed.

摘要翻译： 提供一种用于半导体处理器的气体分析器，其能够监测影响半导体处理器原位处理性的气体成分的泄漏或变化。 在半导体处理器的室的外壁上设置管道，用于从室中取出要分析的气体。 气体分析室通过管道存储待分析的气体。 排气形成部安装在气体分析室附近。 放电形成部包括产生高频的高频发生线圈，在气体分析室内形成待分析气体的等离子体。 该气体分析器还包括分析分析气体的等离子体的发射波长的光谱仪。