发明授权
US06221154B1 Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
有权
生长β-碳化硅纳米棒的方法，以及通过化学气相沉积（CVD）制备图案化场致发射体
- 专利标题： Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
- 专利标题（中）： 生长β-碳化硅纳米棒的方法，以及通过化学气相沉积（CVD）制备图案化场致发射体
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申请号： US09252568申请日： 1999-02-18
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公开(公告)号： US06221154B1公开(公告)日： 2001-04-24
- 发明人: Shuit-tong Lee , Chun-Sing Lee , Ning Wang , Igor Bello , Carol Hau Ling Lai , Xing Tai Zhou , Frederick Chi Kan Au
- 申请人： Shuit-tong Lee , Chun-Sing Lee , Ning Wang , Igor Bello , Carol Hau Ling Lai , Xing Tai Zhou , Frederick Chi Kan Au
- 主分类号： C30B2962
- IPC分类号： C30B2962
摘要：
A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon powder as silicon sources. Metal powders (Fe, Cr and/or Ni) are used as catalyst. Hydrogen was the only feeding gas to the system.
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