公开(公告)号：US06221154B1

公开(公告)日：2001-04-24

申请号：US09252568

申请日：1999-02-18

申请人： Shuit-tong Lee ,  Chun-Sing Lee ,  Ning Wang ,  Igor Bello ,  Carol Hau Ling Lai ,  Xing Tai Zhou ,  Frederick Chi Kan Au

发明人： Shuit-tong Lee ,  Chun-Sing Lee ,  Ning Wang ,  Igor Bello ,  Carol Hau Ling Lai ,  Xing Tai Zhou ,  Frederick Chi Kan Au

IPC分类号： C30B2962

CPC分类号： B82Y10/00 ,  C30B23/00 ,  C30B29/605 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/762 ,  Y10S977/775 ,  Y10S977/777 ,  Y10S977/843 ,  Y10S977/89

摘要： A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon powder as silicon sources. Metal powders (Fe, Cr and/or Ni) are used as catalyst. Hydrogen was the only feeding gas to the system.

摘要翻译： 已经开发了生长β-碳化硅纳米棒的方法和装置，并且使用不同种类的化学气相沉积方法制备图案化的场致发射体。 该装置包括石墨粉作为碳源，硅粉作为硅源。 使用金属粉末（Fe，Cr和/或Ni）作为催化剂。 氢气是系统中唯一的进料气体。

公开(公告)号：US06313015B1

公开(公告)日：2001-11-06

申请号：US09328834

申请日：1999-06-08

申请人： Shuit-Tong Lee ,  Ning Wang ,  Chun-Sing Lee ,  Igor Bello

发明人： Shuit-Tong Lee ,  Ning Wang ,  Chun-Sing Lee ,  Igor Bello

IPC分类号： H01L2120

CPC分类号： C30B23/00 ,  C30B29/06 ,  C30B29/605 ,  Y10S438/962 ,  Y10S977/891

摘要： Silicon nanowires and silicon nanoparticle chains are formed by the activation of silicon monoxide in the vapor phase. The silicon monoxide source may be solid or gaseous, and the activation may be by thermal excitation, laser ablation, plasma or magnetron sputtering. The present invention produces large amounts of silicon nanowires without requiring the use of any catalysts that may cause contamination.

摘要翻译： 通过气相中一氧化硅的活化形成硅纳米线和硅纳米颗粒链。 一氧化碳源可以是固体或气体，并且活化可以通过热激发，激光烧蚀，等离子体或磁控溅射。 本发明产生大量的硅纳米线，而不需要使用可能引起污染的任何催化剂。

公开(公告)号：US06761803B2

公开(公告)日：2004-07-13

申请号：US10023418

申请日：2001-12-17

申请人： Shuit-Tong Lee ,  Igor Bello ,  Chun-Sing Lee ,  Quan Li ,  Naigui Shang

发明人： Shuit-Tong Lee ,  Igor Bello ,  Chun-Sing Lee ,  Quan Li ,  Naigui Shang

IPC分类号： C23C1434

CPC分类号： H01J9/025 ,  H01J2237/3151

摘要： A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

摘要翻译： 已经开发了使用不同种类的离子束溅射方法制造大面积均匀硅锥阵列的方法和装置。 该装置包括作为硅源的硅衬底，并且使用金属箔作为催化剂。 还开发了用于场致发射应用的合成硅锥体的表面改性方法，包括氢氟酸蚀刻，退火和低功函数金属涂层。 基于硅锥的纳米结构改性利用了锥尖由金属/金属硅化物组成的事实，其可以用作纳米线生长的催化剂和模板。 已经开发了一种在硅锥顶端生长氧化硅/硅纳米线的方法和装置。

公开(公告)号：US20060147282A1

公开(公告)日：2006-07-06

申请号：US11207535

申请日：2005-08-19

申请人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

发明人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

IPC分类号： B23P15/28 ,  B32B19/00

CPC分类号： C23C14/0647 ,  C23C16/02 ,  C23C16/27 ,  C23C16/342 ,  Y10T407/27 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation. The cBN films in cBND composites of the present invention can grow directly on the underlaying diamond films in heteroepitaxial relationships.

摘要翻译： 公开了对各种基材具有优异粘附性的立方氮化硼/金刚石（cBND）复合膜及其制造方法。 cBND复合材料限制cBN可以在没有任何无定形/涡流BN（aBN / tBN）孵育层的情况下制备。 cBND复合材料建立在两种优质材料的结构和物理性能的兼容性上：顶部的cBN和下面的金刚石。 底层金刚石使用各种方法适应于所选择的基底，其可以包括预先对基底进行预处理，偏置增强的成核，用于消耗不期望的化学元素的蚀刻，用于隔离不期望的化学元素的缓冲层和梯度缓冲层的构造或/ 和物理性质的适应。 金刚石核优选通过偏置增强成核或通过在成核之前预先刮擦基底来形成。 本发明的cBND复合材料中的cBN膜可以以异质外延关系直接在底层金刚石膜上生长。

公开(公告)号：US08158011B2

公开(公告)日：2012-04-17

申请号：US12250716

申请日：2008-10-14

申请人： Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

发明人： Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

IPC分类号： C25F3/00 ,  B44C1/22

CPC分类号： C23C16/0254 ,  C23C16/274 ,  C23C16/342 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  C30B29/403

摘要： A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the cBN film, and (e) etching the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.

摘要翻译： 在金刚石层状基板上形成立方氮化硼（cBN）的锥形结构。 形成cBN结构的方法包括以下步骤：（a）在衬底上形成金刚石核，（b）在衬底上生长一层金刚石膜，（c）在所述金刚石层上沉积cBN膜，（d） 在cBN膜上沉积纳米级蚀刻掩模，和（e）蚀刻沉积的cBN膜。 具体而言，立方氮化硼结构在探针分析和测试技术方面具有巨大的潜在应用，包括扫描探针显微镜（SPM）和纳米压痕，纳米力学和纳米加工在进行中的微机电系统（MEMS）和纳米机电系统（NEMS） 场电子发射，真空微电子器件，传感器和不同电极系统，包括用于电化学的电极系统。

公开(公告)号：US08007910B2

公开(公告)日：2011-08-30

申请号：US11880115

申请日：2007-07-19

申请人： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

发明人： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

IPC分类号： B32B9/00

CPC分类号： C23C16/279 ,  C23C14/0647 ,  C23C16/274 ,  C23C28/044 ,  C23C28/048 ,  C23C28/42 ,  C23C30/005 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion. Nano-cBN layers are directly grown on nanodiamond crystallites using ion-assisted physical vapor deposition (PVD) and ion-assisted plasma enhanced chemical vapor deposition (PECVD), again followed by nanodiamond deposition using CVD methods in cycles until the intended number of layers of the MLC is obtained.

摘要翻译： 多层涂层（MLC）由两种化学不同的层状纳米晶体材料纳米金刚石（nanoD）和纳米立方氮化硼（non-cBN）组成。 公开了MLC的结构和分层结构的制造顺序。 基层优选为纳米D，并且是作为预处理基底上的收容层的第一沉积层。 它可以被设计成具有较大的厚度，而后续的交替的纳米cBN和nanoD层通常以2至100nm的厚度制备。 这些层的厚度可以被设计用于特定用途。 通过冷或热等离子体CVD沉积纳米D层之前，在预处理和/或预涂底物上进行金刚石成核，其具有容纳MLC的能力并提供优异的附着力。 使用离子辅助物理气相沉积（PVD）和离子辅助等离子体增强化学气相沉积（PECVD）在纳米金刚石微晶上直接生长纳米cBN层，然后再循环使用CVD法进行纳米金刚石沉积，直到预期数量的层 获得MLC。

公开(公告)号：US08101526B2

公开(公告)日：2012-01-24

申请号：US12046673

申请日：2008-03-12

申请人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

发明人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

IPC分类号： H01L21/461

CPC分类号： C30B29/04 ,  B29C59/14 ,  B82Y15/00 ,  B82Y30/00 ,  C23C16/27 ,  C23C16/56 ,  C30B25/105 ,  C30B29/60 ,  Y10S438/947

摘要： A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.

摘要翻译： 一种用于制造金刚石纳米柱的方法包括在基底上形成金刚石膜，在金刚石膜上沉积金属掩模层，以及蚀刻涂覆有金属掩模层的金刚石膜，以在掩模层下形成金刚石纳米柱。 该方法还可以包括在形成金刚石膜之前在衬底上形成金刚石核。 通常使用半导体衬底，绝缘衬底，金属衬底或合金衬底。

公开(公告)号：US20090233445A1

公开(公告)日：2009-09-17

申请号：US12046673

申请日：2008-03-12

申请人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

发明人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

IPC分类号： H01L21/311 ,  C23F1/02

CPC分类号： C30B29/04 ,  B29C59/14 ,  B82Y15/00 ,  B82Y30/00 ,  C23C16/27 ,  C23C16/56 ,  C30B25/105 ,  C30B29/60 ,  Y10S438/947

摘要： A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.

摘要翻译： 一种用于制造金刚石纳米柱的方法包括在基底上形成金刚石膜，在金刚石膜上沉积金属掩模层，以及蚀刻涂覆有金属掩模层的金刚石膜，以在掩模层下形成金刚石纳米柱。 该方法还可以包括在形成金刚石膜之前在衬底上形成金刚石核。 通常使用半导体衬底，绝缘衬底，金属衬底或合金衬底。

公开(公告)号：US07645513B2

公开(公告)日：2010-01-12

申请号：US11207535

申请日：2005-08-19

申请人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

发明人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

IPC分类号： B32B9/00

CPC分类号： C23C14/0647 ,  C23C16/02 ,  C23C16/27 ,  C23C16/342 ,  Y10T407/27 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation. The cBN films in cBND composites of the present invention can grow directly on the underlaying diamond films in heteroepitaxial relationships.

摘要翻译： 公开了对各种基材具有优异粘附性的立方氮化硼/金刚石（cBND）复合膜及其制造方法。 cBND复合材料限制cBN可以在没有任何无定形/涡流BN（aBN / tBN）孵育层的情况下制备。 cBND复合材料建立在两种优质材料的结构和物理性能的兼容性上：顶部的cBN和下面的金刚石。 底层金刚石使用各种方法适应于所选择的基底，其可以包括预先对基底进行预处理，偏置增强的成核，用于消耗不期望的化学元素的蚀刻，用于隔离不期望的化学元素的缓冲层和梯度缓冲层的构造或/ 和物理性质的适应。 金刚石核优选通过偏置增强成核或通过在成核之前预先刮擦基底来形成。 本发明的cBND复合材料中的cBN膜可以以异质外延关系直接在底层金刚石膜上生长。

公开(公告)号：US07579759B2

公开(公告)日：2009-08-25

申请号：US11760996

申请日：2007-06-11

申请人： Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

发明人： Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

IPC分类号： H01L41/09

CPC分类号： H03H9/02582 ,  H03H9/02574

摘要： A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.

摘要翻译： 公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。 在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜 。 具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子） 化学气相沉积（PECVD）。 由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。