发明授权
- 专利标题： Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities
- 专利标题（中）： 制造具有高活性化杂质的碳化硅半导体器件的方法
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申请号： US09362088申请日： 1999-07-28
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公开(公告)号： US06221700B1公开(公告)日： 2001-04-24
- 发明人: Eiichi Okuno , Jun Kojima
- 申请人： Eiichi Okuno , Jun Kojima
- 优先权： JP10-217727 19980731
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal structure through solid-phase growth while disposing the impurities at lattice positions of the crystal structure. As a result, a surface channel layer is formed with a high activation rate of the impurities.