发明授权
US06221775B1 Combined chemical mechanical polishing and reactive ion etching process
失效
组合化学机械抛光和反应离子蚀刻工艺
- 专利标题: Combined chemical mechanical polishing and reactive ion etching process
- 专利标题(中): 组合化学机械抛光和反应离子蚀刻工艺
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申请号: US09159699申请日: 1998-09-24
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公开(公告)号: US06221775B1公开(公告)日: 2001-04-24
- 发明人: Thomas G. Ference , William F. Landers , Michael J. MacDonald , Walter E. Mlynko , Mark P. Murray , Kirk D. Peterson
- 申请人: Thomas G. Ference , William F. Landers , Michael J. MacDonald , Walter E. Mlynko , Mark P. Murray , Kirk D. Peterson
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
A process of planarizing the surface of a semiconductor substrate. The process begins by forming patterned raised and recessed regions on the surface of the semiconductor substrate. A layer of material then is formed over the patterned raised and recessed regions. The layer is subjected to a chemical mechanical planarizing (CMP) process step until all of the raised regions are at least partially removed from the layer. Finally, the surface of the polished substrate is etched with a reactive ion etching (RIE) process.