发明授权
- 专利标题： Single-ended semiconductor receiver with built in threshold voltage difference
- 专利标题（中）： 单端半导体接收器内置阈值电压差
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申请号： US09225112申请日： 1999-01-04
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公开(公告)号： US06222395B1公开(公告)日： 2001-04-24
- 发明人: Claude L. Bertin , Russell J. Houghton , William R. Tonti
- 申请人： Claude L. Bertin , Russell J. Houghton , William R. Tonti
- 主分类号： G05F110
- IPC分类号： G05F110
摘要：
A differential receiver for sensing small input voltage swings by using a built in reference voltage obtained by a difference in threshold voltage between a differential pair of closely spaced transistors. The difference in threshold voltage can be produced by different values of ion implantation of the gates of the transistor pair with the same material, or by dosages using different materials. The difference in threshold voltage can also be obtained by using different transistor channel lengths. The threshold voltages can also be modulated by the control of the transistor substrate voltages using a voltage control substrate means.