发明授权
US06228279B1 High-density plasma, organic anti-reflective coating etch system compatible with sensitive photoresist materials
失效
高密度等离子体，有机抗反射涂层蚀刻系统兼容敏感光刻胶材料
- 专利标题： High-density plasma, organic anti-reflective coating etch system compatible with sensitive photoresist materials
- 专利标题（中）： 高密度等离子体，有机抗反射涂层蚀刻系统兼容敏感光刻胶材料
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申请号： US09156065申请日： 1998-09-17
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公开(公告)号： US06228279B1公开(公告)日： 2001-05-08
- 发明人: Michael Armacost , Peter Hoh , Richard S. Wise , Wendy Yan
- 申请人： Michael Armacost , Peter Hoh , Richard S. Wise , Wendy Yan
- 主分类号： H01L213065
- IPC分类号： H01L213065
摘要：
By providing a photoresist material with a protective polymer layer during the etching of an organic anti-reflective coating, undue damage to the photoresist material can be avoided during opening of the anti-reflective coating without the need for an oxidant. The preferred polymer chemistry system for producing such a result includes a fluorohydrocarbon-containing polymer mixture with a strong source of CF3, preferably C2F6. The etchant also includes a source of hydrogen selected from CH3F, C2HF5, or CH2F2, and a diluent selected from Ar, He or N2.
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