发明授权
- 专利标题: Vertical DRAM cell with TFT over trench capacitor
- 专利标题(中): 具有TFT沟槽电容器的垂直DRAM单元
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申请号: US09384298申请日: 1999-08-26
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公开(公告)号: US06228706B1公开(公告)日: 2001-05-08
- 发明人: David Vaclav Horak , Rick Lawrence Mohler , Gorden Seth Starkey, Jr.
- 申请人: David Vaclav Horak , Rick Lawrence Mohler , Gorden Seth Starkey, Jr.
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
A memory cell which comprises a substrate having a top surface; a capacitor extending vertically into the substrate for storing a voltage representing a datum, said capacitor occupying a geometrically shaped horizontal area; a transistor formed above the capacitor and occupying a horizontal area substantially equal to the geometrically shaped horizontal area, and having a vertical device depth, for establishing an electrical connection with the capacitor, in response to a control signal, for reading from, and writing to, the capacitor, wherein the transistor includes a gate formed near the periphery of said horizontal device area and having a vertical depth approximately equal to the vertical device depth; an oxide layer on an inside surface of the gate; a conductive body formed inside the oxide layer, said conductive body having a top surface and a bottom surface and a vertical depth approximately equal to the vertical device depth; and diffusion regions in the body near the top and bottom surfaces and a method of manufacturing the same is provided.