发明授权
US06228760B1 Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish
有权
使用PE-SiON或PE-OXIDE进行接触或通过照相和氧化物和W化学机械抛光的缺陷还原
- 专利标题： Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish
- 专利标题（中）： 使用PE-SiON或PE-OXIDE进行接触或通过照相和氧化物和W化学机械抛光的缺陷还原
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申请号： US09263563申请日： 1999-03-08
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公开(公告)号： US06228760B1公开(公告)日： 2001-05-08
- 发明人: Chen-Hua Yu , Syun-Ming Jang , Tsu Shih , Anthony Yen , Jih-Churng Twu
- 申请人： Chen-Hua Yu , Syun-Ming Jang , Tsu Shih , Anthony Yen , Jih-Churng Twu
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A method forming a protective (SiON or PE-Ox) dielectric anti-reflective coating (DARC) over a di electric layer after a chemical-mechanical polish dielectric layer planarization process and before a chemical-mechanical polish of a conductive layer used in a contact or via plug formation. A dielectric layer is chemical-mechanical polished thereby creating microscratches in the dielectric layer. The invention's protective SiON or PE-OX DARC layer is formed over the dielectric layer whereby the protective SiON or PE-OX DARC layer fills in the microscratches. A first opening is etched in he protective layer and the dielectric layer. A conductive layer is formed over the protective layer and fills the first opening. The conductive layer is chemical-mechanical polished to remove the conductive layer from over the protective layer and to form an interconnect filling the first opening. The protective SiON or PE-OX DARC layer is used as a CMP stop thereby preventing microscratches in the dielectric layer.