The method for manufacturing a semiconductor device of this invention comprises the steps: forming a first wiring layer on a semiconductor substrate on which a capacitor element with a capacitor dielectric film is formed, and the capacitor dielectric film is at least one film selected from the group consisting of a capacitor dielectric film with high dielectric constant and a ferroelectric film; conducting a first annealing to said semiconductor substrate; forming a second wiring layer on said first wiring layer; etching selectively the first wiring layer and the second wiring layer; and conducting a second annealing to the semiconductor substrate, so that the stress provided to the capacitor element can be reduced by annealing after forming each wiring layer, and thus, it can prevent the increase of leakage current and deterioration of dielectric breakdown voltage of the capacitor element having a capacitor dielectric film comprising a high capacitor dielectric film and a ferroelectric film.