公开(公告)号：US06174822B1

公开(公告)日：2001-01-16

申请号：US09175250

申请日：1998-10-20

申请人： Yoshihisa Nagano ,  Toshie Kutsunai ,  Yuji Judai ,  Yasuhiro Uemoto ,  Eiji Fujii

发明人： Yoshihisa Nagano ,  Toshie Kutsunai ,  Yuji Judai ,  Yasuhiro Uemoto ,  Eiji Fujii

IPC分类号： H01L2131

CPC分类号： H01L27/1085 ,  H01L21/76895 ,  H01L23/5223 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.

摘要翻译： 半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

公开(公告)号：US20050082638A1

公开(公告)日：2005-04-21

申请号：US10968623

申请日：2004-10-19

申请人： Yoshihisa Nagano ,  Toshie Kutsunai ,  Yuji Judai ,  Yasuhiro Uemoto ,  Eiji Fujii

发明人： Yoshihisa Nagano ,  Toshie Kutsunai ,  Yuji Judai ,  Yasuhiro Uemoto ,  Eiji Fujii

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L29/76 ,  H01L21/3205

CPC分类号： H01L27/1085 ,  H01L21/76895 ,  H01L23/5223 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.

公开(公告)号：US06573111B2

公开(公告)日：2003-06-03

申请号：US10177781

申请日：2002-06-20

申请人： Yoshihisa Nagano ,  Yasuhiro Uemoto ,  Yuji Judai ,  Masamichi Azuma ,  Eiji Fujii

发明人： Yoshihisa Nagano ,  Yasuhiro Uemoto ,  Yuji Judai ,  Masamichi Azuma ,  Eiji Fujii

IPC分类号： H01L2100

CPC分类号： H01L27/11502 ,  H01L21/76895 ,  H01L27/11507

摘要： A semiconductor device includes: a silicon substrate; a MOS semiconductor device provided on the silicon substrate, the MOS semiconductor device including a silicide region on an outermost surface thereof; a first insulating film covering the MOS semiconductor device; a capacitor element provided on the first insulating film, the capacitor element comprising a lower electrode, an upper electrode, and a capacitor film interposed between the lower electrode and the upper electrode, and the capacitor film comprising a ferroelectric material; a second insulating film covering the first insulating film and the capacitor element; a contact hole provided in the first insulating film and the second insulating film over the MOS semiconductor device and the capacitor element; and an interconnection layer provided on the second insulating film for electrically connecting the MOS semiconductor device and the capacitor element to each other, wherein a bottom portion of the interconnection layer comprises a conductive material other than titanium.

公开(公告)号：US6046490A

公开(公告)日：2000-04-04

申请号：US132023

申请日：1998-08-10

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Yoshihisa Nagano ,  Akihiro Matsuda

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Yoshihisa Nagano ,  Akihiro Matsuda

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L29/40

CPC分类号： H01L28/55 ,  H01L21/76895

摘要： A semiconductor device is provided with a multilayered interconnection and a capacitor dielectric element, in which the transistor in the device has a non-degraded characteristics and the degradation of the capacitor dielectric element is suppressed. The semiconductor device has wiring layers connecting to one another through contact holes in insulating layers. One of the insulating layers is formed so as to cover at least a part of the area above the transistor and so as not to cover the area above the capacitor dielectric element. Hydrogen generated by heat-treating the insulating layer is supplied to the transistor to recover the damage in it, while hydrogen is suppressed from arriving at the capacitor element so that the capacitor dielectric element does not degrade.

摘要翻译： 半导体器件设置有多层互连和电容器介质元件，其中器件中的晶体管具有非劣化特性，并且抑制了电容器介质元件的劣化。 半导体器件具有通过绝缘层中的接触孔彼此连接的布线层。 绝缘层之一形成为覆盖晶体管上方的区域的至少一部分，并且不覆盖电容器介质元件上方的区域。 通过热处理绝缘层产生的氢气被提供给晶体管以恢复其中的损坏，同时抑制氢气到达电容器元件，使得电容器介质元件不劣化。

公开(公告)号：US06169304A

公开(公告)日：2001-01-02

申请号：US09071534

申请日：1998-05-04

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US5780351A

公开(公告)日：1998-07-14

申请号：US844108

申请日：1997-04-28

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种半导体器件，其在形成集成电路的半导体衬底上通过层间绝缘层形成电容器。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US06468875B2

公开(公告)日：2002-10-22

申请号：US09768170

申请日：2001-01-24

申请人： Yasuhiro Uemoto ,  Eiji Fujii ,  Koji Arita ,  Yoshihisa Nagano ,  Yasuhiro Shimada ,  Masamichi Azuma ,  Atsuo Inoue ,  Yasufumi Izutsu

发明人： Yasuhiro Uemoto ,  Eiji Fujii ,  Koji Arita ,  Yoshihisa Nagano ,  Yasuhiro Shimada ,  Masamichi Azuma ,  Atsuo Inoue ,  Yasufumi Izutsu

IPC分类号： H01L2120

CPC分类号： H01L27/11502 ,  H01L28/40 ,  H01L28/56

摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.

摘要翻译： 一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜 钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

公开(公告)号：US06333528B1

公开(公告)日：2001-12-25

申请号：US09071795

申请日：1998-05-04

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US6015987A

公开(公告)日：2000-01-18

申请号：US71122

申请日：1998-05-04

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/108 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US5624864A

公开(公告)日：1997-04-29

申请号：US284984

申请日：1994-08-04

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。