发明授权
US06235163B1 Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance
失效
用于电离金属等离子体铜沉积的方法和装置,具有增强的膜内颗粒性能
- 专利标题: Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance
- 专利标题(中): 用于电离金属等离子体铜沉积的方法和装置,具有增强的膜内颗粒性能
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申请号: US09350556申请日: 1999-07-09
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公开(公告)号: US06235163B1公开(公告)日: 2001-05-22
- 发明人: Darryl Angelo , Arvind Sundarrajan , Peijun Ding , James H. Tsung , Ilyoung R. Hong , Barry Chin
- 申请人: Darryl Angelo , Arvind Sundarrajan , Peijun Ding , James H. Tsung , Ilyoung R. Hong , Barry Chin
- 主分类号: C23C1434
- IPC分类号: C23C1434
摘要:
An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.
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