发明授权
- 专利标题： Method of manufacturing a self-aligned vertical bipolar transistor
- 专利标题（中）： 制造自对准垂直双极晶体管的方法
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申请号： US08934301申请日： 1997-09-19
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公开(公告)号： US06235601B1公开(公告)日： 2001-05-22
- 发明人: Manjin J. Kim
- 申请人： Manjin J. Kim
- 主分类号： H01L21331
- IPC分类号： H01L21331
摘要：
A process is set forth for providing a self-aligned, vertical bipolar transistor. A controlled technique is provided for providing the base and emitter features of the transistor with appropriate dimensions and properties to be useful in high frequency microwave applications. A microwave transistor is provided by this technique.
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