The light-emitting diode array of the invention includes: a semiconductor substrate of a first conductivity type and a plurality of light-emitting elements linearly arranged on the substrate of the first conductivity type. Each of the plurality of light-emitting elements includes: a cladding layer of the first conductivity type; a cladding layer of a second conductivity type; an (AlxGa1−x)yIn1−yP (where 0≦x≦1 and 0≦y≦1) active layer interposed between the cladding layer of the first conductivity type and the cladding layer of the second conductivity type; and a current diffusion layer of the second conductivity type deposited on the cladding layer of the second conductivity type. In the light-emitting diode array, at least the current diffusion layer of the second conductivity type and the cladding layer of the second conductivity type are electrically isolated from each other in two adjacent light-emitting elements among the plurality of light-emitting elements.