公开(公告)号：US08647904B2

公开(公告)日：2014-02-11

申请号：US13580330

申请日：2011-02-23

申请人： Masahiro Araki ,  Takaaki Utsumi ,  Masahiko Sakata

发明人： Masahiro Araki ,  Takaaki Utsumi ,  Masahiko Sakata

IPC分类号： H01L21/00

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.

摘要翻译： 提供一种用于制造氮化物半导体器件的方法，包括以下步骤：在衬底上形成至少含有铝，氮和氧的AlNO缓冲层; 以及在所述AlNO缓冲层上形成氮化物半导体层，其中，在形成所述AlNO缓冲层的步骤中，所述AlNO缓冲层是通过在大气中使用铝作为靶的反应性溅射法形成的， 氧气连续引入并排出，气氛是氧气流量与氮气流量与氧气流量之和的比率不大于0.5的气氛 ％。

公开(公告)号：US06826218B2

公开(公告)日：2004-11-30

申请号：US09987921

申请日：2001-11-16

申请人： Noboru Oshima ,  Masahiko Sakata ,  Makoto Yokota

发明人： Noboru Oshima ,  Masahiko Sakata ,  Makoto Yokota

IPC分类号： H01S500

CPC分类号： H01S5/028 ,  H01S5/0282

摘要： For evaporating a protective coating on a light emitting end surface 51a of a laser chip 51, there is formed first an Si film 52a, which is free from generation of oxygen due to decomposition. Thus, there is created a coating in the vicinity of the light emitting end surface 51a immediately after start of evaporation process under conditions of low partial pressure of oxygen. At the same time, in the later evaporation process of the protective coating 52b, if oxygen is generated due to decomposition of the evaporation material Al2O3, and oxygen partial pressure is increased, collision or bonding of the oxygen with the end surface 51a is prevented, thereby decreasing damages given to the end surface 51a in the process of protective coating creation. Further, the Si film 52a has a film thickness as small as approx. 20 Å. This controls generation of leakage current in the Si film 52a (or the end surface 51a), and prevents negative influence on oscillation characteristics.

摘要翻译： 为了蒸发激光芯片51的发光端面51a上的保护涂层，首先形成由于分解而不产生氧的Si膜52a。 因此，在氧分压低的条件下，在蒸发处理开始后立即在发光端面51a附近形成涂层。 同时，在保护涂层52b的后期蒸发过程中，如果由于蒸发材料Al 2 O 3的分解而产生氧，并且氧分压增加，则防止了氧与端面51a的碰撞或结合， 从而在保护涂层的制造过程中减少对端面51a的损伤。 此外，Si膜52a的膜厚度约为 20Å。 这可以控制Si膜52a（或端面51a）中的漏电流的产生，并且防止对振荡特性的负面影响。

公开(公告)号：US20120319162A1

公开(公告)日：2012-12-20

申请号：US13580330

申请日：2011-02-23

申请人： Masahiro Araki ,  Takaaki Utsumi ,  Masahiko Sakata

发明人： Masahiro Araki ,  Takaaki Utsumi ,  Masahiko Sakata

IPC分类号： H01L21/20 ,  H01L33/32

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.

摘要翻译： 提供一种用于制造氮化物半导体器件的方法，包括以下步骤：在衬底上形成至少含有铝，氮和氧的AlNO缓冲层; 以及在所述AlNO缓冲层上形成氮化物半导体层，其中，在形成所述AlNO缓冲层的步骤中，所述AlNO缓冲层是通过在大气中使用铝作为靶的反应性溅射法形成的， 氧气连续引入并排出，气氛是氧气流量与氮气流量与氧气流量之和的比率不大于0.5的气氛 ％。

公开(公告)号：US06870870B2

公开(公告)日：2005-03-22

申请号：US10166032

申请日：2002-06-11

申请人： Masahiko Sakata ,  Atsuo Tsunoda

发明人： Masahiko Sakata ,  Atsuo Tsunoda

IPC分类号： H01L21/3065 ,  H01L21/306 ,  H01S5/20 ,  H01S5/223 ,  H01S5/343 ,  H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/2081 ,  H01S5/209

摘要： The present invention relates to a ridge-stripe semiconductor laser device and a process for producing the same. More specifically, the object of the present invention is to control the formation of cavities at the side of the ridge without adding any step, and to provide a ridge stripe semiconductor laser device with good properties by strictly controlling its ridge width and a process for producing the same. Thereby, it is possible to form a ridge whose sidewalls stand almost vertically.

摘要翻译： 脊条半导体激光器件及其制造方法技术领域本发明涉及脊条半导体激光器件及其制造方法。 更具体地说，本发明的目的是控制在脊的一侧形成空腔，而不增加任何步骤，并通过严格控制其脊宽度来提供具有良好性能的脊条半导体激光器件，以及制造方法 一样。 因此，可以形成其侧壁几乎垂直的脊。

公开(公告)号：US06236065B1

公开(公告)日：2001-05-22

申请号：US08948246

申请日：1997-10-09

申请人： Takahisa Kurahashi ,  Masahiko Sakata

发明人： Takahisa Kurahashi ,  Masahiko Sakata

IPC分类号： H01L3300

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/30

摘要： The light-emitting diode array of the invention includes: a semiconductor substrate of a first conductivity type and a plurality of light-emitting elements linearly arranged on the substrate of the first conductivity type. Each of the plurality of light-emitting elements includes: a cladding layer of the first conductivity type; a cladding layer of a second conductivity type; an (AlxGa1−x)yIn1−yP (where 0≦x≦1 and 0≦y≦1) active layer interposed between the cladding layer of the first conductivity type and the cladding layer of the second conductivity type; and a current diffusion layer of the second conductivity type deposited on the cladding layer of the second conductivity type. In the light-emitting diode array, at least the current diffusion layer of the second conductivity type and the cladding layer of the second conductivity type are electrically isolated from each other in two adjacent light-emitting elements among the plurality of light-emitting elements.

摘要翻译： 本发明的发光二极管阵列包括：第一导电类型的半导体衬底和在第一导电类型的衬底上线性排列的多个发光元件。 多个发光元件中的每一个包括：第一导电类型的包覆层; 第二导电类型的包覆层; 插入在第一导电类型的包层和第二导电类型的包层之间的（Al x Ga 1-x）y In 1-y P（其中0 <= x <= 1且0 <= y <= 1）有源层; 以及沉积在第二导电类型的包层上的第二导电类型的电流扩散层。 在发光二极管阵列中，在多个发光元件中的至少两个相邻的发光元件中，至少第二导电型的电流扩散层和第二导电型的包层彼此电隔离。

公开(公告)号：US5548652A

公开(公告)日：1996-08-20

申请号：US974976

申请日：1992-11-12

申请人： Susumu Fujiwara ,  Masahiko Sakata ,  Mikio Ishizuka

发明人： Susumu Fujiwara ,  Masahiko Sakata ,  Mikio Ishizuka

IPC分类号： G10K11/178 ,  H04M1/19 ,  A61F11/06 ,  H03B29/00

CPC分类号： G10K11/1788 ,  H04M1/19 ,  G10K2210/103 ,  G10K2210/1081 ,  G10K2210/1283 ,  G10K2210/3033 ,  G10K2210/3039 ,  G10K2210/3046

摘要： A silencing apparatus for effectively reducing noises in the three dimension space which detects physical characteristics of the noise source by the laser doppler sensor unit during the noise source comes close to the telephone booth, and collects acoustic characteristics of the noise source by the sensor microphone array. The control portion generates an inverse-phased signal against the noise source so that the noises are decreased at the error sensor, and stores the noise source information (physical characteristics and the acoustic characteristics) and the generated inverse-phased signal. When the same noise source come closely, the voice is generated from the speaker using the inverse-phased signal stored in the memory. The control potion generates an inverse-phased voice from the speaker when the collected noise by the sensor microphone is actually over a certain threshold level.

摘要翻译： 用于有效降低在噪声源期间由激光多普勒传感器单元检测噪声源的物理特性的三维空间中的噪声的消音装置靠近电话亭，并且通过传感器麦克风阵列收集噪声源的声学特性 。 控制部分产生针对噪声源的反相信号，使得噪声在误差传感器处降低，并且存储噪声源信息（物理特性和声学特性）和产生的反相信号。 当相同的噪声源密切相关时，使用存储在存储器中的反相信号从扬声器产生语音。 当传感器麦克风收集的噪声实际上超过某一阈值水平时，控制剂从扬声器产生反相声音。

公开(公告)号：US20110062016A1

公开(公告)日：2011-03-17

申请号：US12854715

申请日：2010-08-11

申请人： Masahiro ARAKI ,  Takaaki Utsumi ,  Masahiko Sakata

发明人： Masahiro ARAKI ,  Takaaki Utsumi ,  Masahiko Sakata

IPC分类号： C23C14/35

CPC分类号： C23C14/0036 ,  C23C14/0641 ,  C23C14/35 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014

摘要： There is provided a method for manufacturing an aluminum-containing nitride intermediate layer, a method for manufacturing a nitride layer, and a method for manufacturing a nitride semiconductor element by using the nitride layer, in which at least one of the following conditions (i) to (iii) is employed during stacking of the aluminum-containing nitride intermediate layer by using a DC magnetron sputtering method in which a voltage is applied by means of a DC-continuous scheme.(i) The shortest distance between a center of a surface of a target and a growth surface of a substrate is set to 100 mm or more and 250 mm or less. (ii) Nitrogen gas is used as gas supplied to a DC magnetron sputtering apparatus. (iii) The target is inclined with respect to the growth surface of the substrate.

摘要翻译： 提供了一种制造含铝氮化物中间层的方法，一种氮化物层的制造方法以及通过使用氮化物层制造氮化物半导体元件的方法，其中至少一个以下条件（i） 至（iii）用于通过使用通过DC连续方案施加电压的DC磁控溅射法在层叠含铝氮化物中间层期间使用。 （i）靶的表面的中心与基板的生长面之间的最短距离设定为100mm以上且250mm以下。 （ii）使用氮气作为供给直流磁控溅射装置的气体。 （iii）靶相对于基底的生长表面倾斜。

公开(公告)号：US5594803A

公开(公告)日：1997-01-14

申请号：US502326

申请日：1995-07-13

申请人： Susumu Fujiwara ,  Masahiko Sakata ,  Mikio Ishizuka

发明人： Susumu Fujiwara ,  Masahiko Sakata ,  Mikio Ishizuka

IPC分类号： G10K11/178 ,  H04M1/19 ,  A61F11/06

CPC分类号： G10K11/1788 ,  H04M1/19 ,  G10K2210/103 ,  G10K2210/1081 ,  G10K2210/1283 ,  G10K2210/3033 ,  G10K2210/3039 ,  G10K2210/3046

摘要： A silencing apparatus for effectively reducing noises in the three dimension space which detects physical characteristics of the noise source by the laser doppler sensor unit during the noise source comes close to the telephone booth, and collects acoustic characteristics of the noise source by the sensor microphone array. The control portion generates an inverse-phased signal against the noise source so that the noises are decreased at the error sensor, and stores the noise source information ( physical characteristics and the acoustic characteristics) and the generated inverse-phased signal. When the same noise source come closely, the voice is generated from the speaker using the inverse-phased signal stored in the memory. The control portion generates an inverse-phased voice from the speaker when the collected noise by the sensor microphone is actually over a certain threshold level.

摘要翻译： 用于有效降低在噪声源期间由激光多普勒传感器单元检测噪声源的物理特性的三维空间中的噪声的消音装置靠近电话亭，并且通过传感器麦克风阵列收集噪声源的声学特性 。 控制部分产生针对噪声源的反相信号，使得噪声在误差传感器处降低，并且存储噪声源信息（物理特性和声学特性）和产生的反相信号。 当相同的噪声源密切相关时，使用存储在存储器中的反相信号从扬声器产生语音。 当传感器麦克风的收集噪声实际上超过某一阈值水平时，控制部分从扬声器产生反相声音。

公开(公告)号：US08461618B2

公开(公告)日：2013-06-11

申请号：US13185219

申请日：2011-07-18

申请人： Akinori Mizogami ,  Takanori Sonoda ,  Masahiko Sakata ,  Yoshimi Tanimoto ,  Motoi Nagamori ,  Daigaku Kimura

发明人： Akinori Mizogami ,  Takanori Sonoda ,  Masahiko Sakata ,  Yoshimi Tanimoto ,  Motoi Nagamori ,  Daigaku Kimura

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

摘要翻译： 半导体发光器件包括衬底，位于衬底上方的n型半导体层，位于n型半导体层上的半导体发光层，位于半导体发光层上的p型半导体层 。 半导体发光装置还包括位于未曝光部分中的p型半导体层的一部分上的绝缘膜，位于绝缘膜不位于基本上整个p型半导体层的第一透明导电膜 以及位于绝缘膜和第一透明导电膜上的第二透明导电膜。 半导体发光装置还包括位于暴露部分中并与n型半导体层电连接的n型半导体层上方的n侧电极和位于上述第二透明导电膜上的p侧电极 绝缘膜并与p型半导体层电连接。

公开(公告)号：US20120018765A1

公开(公告)日：2012-01-26

申请号：US13185219

申请日：2011-07-18

申请人： Akinori MIZOGAMI ,  Takanori SONODA ,  Masahiko SAKATA ,  Yoshimi TANIMOTO ,  Motoi NAGAMORI ,  Daigaku KIMURA

发明人： Akinori MIZOGAMI ,  Takanori SONODA ,  Masahiko SAKATA ,  Yoshimi TANIMOTO ,  Motoi NAGAMORI ,  Daigaku KIMURA

IPC分类号： H01L33/62

CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

摘要翻译： 半导体发光器件包括衬底，位于衬底上方的n型半导体层，位于n型半导体层上的半导体发光层，位于半导体发光层上的p型半导体层 。 半导体发光装置还包括位于未曝光部分中的p型半导体层的一部分上的绝缘膜，位于绝缘膜不位于基本上整个p型半导体层的第一透明导电膜 以及位于绝缘膜和第一透明导电膜上的第二透明导电膜。 半导体发光装置还包括位于暴露部分中并与n型半导体层电连接的n型半导体层上方的n侧电极和位于上述第二透明导电膜上的p侧电极 绝缘膜并与p型半导体层电连接。