发明授权
- 专利标题: Active control of temperature in scanning probe lithography and maskless lithograpy
- 专利标题(中): 扫描探针光刻和无掩模光刻中主动控制温度
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申请号: US09429994申请日: 1999-10-29
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公开(公告)号: US06238830B1公开(公告)日: 2001-05-29
- 发明人: Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
- 申请人: Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
A system for monitoring and regulating a photoresist temperature in a maskless lithography pattern transfer process is disclosed. The system includes a photoresist layer overlying a substrate and a material associated with the photoresist layer, wherein the material exhibits a transformation over variations in temperature. The system also includes a detection system for detecting the transformation in the material and a processor operatively coupled to the detection system. The processor receives information associated with the detected transformation and uses the information to control a tool being used for the pattern transfer, thereby reducing variations in temperature in the resist during pattern transfer. In addition, a method of monitoring and regulating a photoresist temperature in a maskless lithography pattern transfer process is disclosed. The method includes associating a material having a characteristic which varies over variations in temperature with a photoresist layer which overlies a substrate and detecting the characteristic during the pattern transfer process. Once detected a temperature of a portion of the photoresist layer is determined using the detected characteristic and an operation of a writing tool which performs the pattern transfer process in response to the photoresist layer temperature is controlled in response thereto.
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