发明授权
US06238944B1 Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
有权
埋置异质结构垂直腔表面发射激光二极管通过杂质诱导层失调（IILD）通过埋入杂质源
- 专利标题： Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
- 专利标题（中）： 埋置异质结构垂直腔表面发射激光二极管通过杂质诱导层失调（IILD）通过埋入杂质源
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申请号： US09471746申请日： 1999-12-21
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公开(公告)号： US06238944B1公开(公告)日： 2001-05-29
- 发明人: Philip D. Floyd
- 申请人： Philip D. Floyd
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
The barrier layers within a quantum well active region of a vertical cavity surface emitting laser can be silicon doped. Under thermal annealing, the silicon doped barrier layers will form disordered regions of the quantum well active region around the remaining non-disordered regions of the quantum well active region. The disordered regions of the quantum well active region will prevent diffusion of injected carriers from the non-disordered, light emitting quantum well active region.
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