发明授权
US06239008B1 Method of making a density multiplier for semiconductor device manufacturing
有权
制造用于半导体器件制造的密度倍增器的方法
- 专利标题： Method of making a density multiplier for semiconductor device manufacturing
- 专利标题（中）： 制造用于半导体器件制造的密度倍增器的方法
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申请号： US09407907申请日： 1999-09-29
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公开(公告)号： US06239008B1公开(公告)日： 2001-05-29
- 发明人: Allen S. Yu , Paul J. Steffan , Thomas C. Scholer
- 申请人： Allen S. Yu , Paul J. Steffan , Thomas C. Scholer
- 主分类号： H01L213205
- IPC分类号： H01L213205
摘要：
A method of manufacturing a semiconductor device with increased density of structures that have at least one dimension less than that provided by the lithography system being used in the manufacturing process.
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