发明授权
- 专利标题: Method for fabricating an integrated circuit configuration
- 专利标题(中): 制造集成电路结构的方法
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申请号: US09498530申请日: 2000-02-04
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公开(公告)号: US06242319B1公开(公告)日: 2001-06-05
- 发明人: Franz Hofmann , Josef Willer
- 申请人: Franz Hofmann , Josef Willer
- 优先权: DE19904571 19990204
- 主分类号: H01L2176
- IPC分类号: H01L2176
摘要:
A first structure of a circuit configuration and a first alignment structure are produced in the region of a surface of a first substrate. The first alignment structure scatters electron beams differently than its surroundings. A second substrate, which is more transmissive to electron beams than the first alignment structure, is connected to the first substrate in such a way that the second substrate is disposed above the surface of the first substrate. In order to align a mask with respect to the first structure, a position of the first alignment structure is determined with the aid of electron beams. With the aid of the mask, at least one second structure of the circuit configuration is produced in the region of an uncovered upper surface of the second substrate. The first structure may be a metallic line encapsulated by insulating material. A contact may connect the first structure to the second structure. With the aid of electron beam lithography, at least one second alignment structure may be produced in the region of the upper surface of the second substrate, using which the mask is aligned.
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